IXFH21N50Q IXYS, IXFH21N50Q Datasheet
IXFH21N50Q
Manufacturer Part Number
IXFH21N50Q
Description
MOSFET N-CH 500V 21A TO-247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH21N50Q.pdf
(4 pages)
Specifications of IXFH21N50Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
250 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
84nC @ 10V
Input Capacitance (ciss) @ Vds
3000pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.25 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
21 A
Power Dissipation
280 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
21
Rds(on), Max, Tj=25°c, (?)
0.25
Ciss, Typ, (pf)
3350
Qg, Typ, (nc)
90
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
278
Rthjc, Max, (ºc/w)
0.45
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH21N50Q
Manufacturer:
IXYS
Quantity:
15 500
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
HiPerFET
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
© 2004 IXYS All rights reserved
DM
D25
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
TM
GS
DSS
, di/dt ≤ 100 A/µs, V
, I
D
D
DC
D
= 250 µA
= 4 mA
, V
= 0.5 I
G
= 2 Ω
DS
g
= 0
, High dv/dt
D25
GS
= 1 MΩ
DD
(T
T
T
≤ V
J
J
J
= 25°C, unless otherwise specified)
= 25°C
= 125°C
DSS
,
JM
IXFH 21N50Q
IXFT 21N50Q
500
min.
2.5
-55 to +150
-55 to +150
Characteristic Values
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
±30
±40
280
300
500
500
1.5
150
21
84
21
30
15
6
4
±100
0.25
max.
4.5
25
1
V/ns
mJ
mJ
°C
°C
°C
°C
mA
W
nA
µA
V
V
V
V
A
A
A
V
V
g
g
Ω
Features
l
l
l
l
l
l
Advantages
l
l
l
S = Source TAB = Drain
V
I
R
t
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G = Gate
D25
rr
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Rated for unclamped Inductive load
switching (UIS) rated
Molding epoxies meet UL 94 V-0
flammability classification
Easy to mount
Space savings
High power density
DSS
DS(on)
≤ ≤ ≤ ≤ ≤ 250 ns
DS (on)
D
= 500 V
= 21 A
= 0.25 Ω Ω Ω Ω Ω
G
= Drain
S
g
process
98718B(02/04)
(TAB)
(TAB)
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IXFH21N50Q Summary of contents
Page 1
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2004 IXYS All rights reserved IXFH 21N50Q IXFT 21N50Q Maximum Ratings 500 = 1 MΩ 500 GS ±30 ± 1.5 ≤ DSS 280 -55 to +150 150 -55 to +150 300 1 ...
Page 2
... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. , pulse test 14 ...
Page 3
... Volts D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 3.4 3 10V GS 2.8 2.5 2.2 1.9 1.6 1 Amperes D © 2004 IXYS All rights reserved º 5. 4. º C 2.8 2.5 2.2 1.9 5.5V 1.6 5V 1.3 4.5V 0.7 0 125º 25º ...
Page 4
... V - Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 5 25ºC J 0.8 0.9 1 1.1 1 ...