IXFH6N120 IXYS, IXFH6N120 Datasheet
IXFH6N120
Specifications of IXFH6N120
Related parts for IXFH6N120
IXFH6N120 Summary of contents
Page 1
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2005 IXYS All rights reserved IXFH 6N120 Maximum Ratings 1200 = 1 MΩ 1200 GS ±20 ± 500 ≤ DSS 300 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. 6 Characteristic Values Min ...
Page 2
... Pulse test, t ≤ 300 µs, duty cycle d ≤ di/dt ≤ 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. Max. ...
Page 3
... V - Volts DS Fig. 3. Output Characteristics @ 125 Deg Volts DS Fig Normalized to I DS(on) Value vs 2 Amperes D © 2005 IXYS All rights reserved D25 25º 25º 7.5 9 IXFH 6N120 Fig. 2. Extended Output Characteristics @ 25 deg Volts DS Fig Normalized to I Value vs. DS(on) D25 Junction Temperature 3 ...
Page 4
... V - Volts SD Fig. 11. Capacitance 1 0000 000 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 5 25ºC J 0.7 0.8 0.9 C iss C oss C rss 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 ...