IXFH150N15P IXYS, IXFH150N15P Datasheet - Page 4

MOSFET N-CH 150V 150A TO-247

IXFH150N15P

Manufacturer Part Number
IXFH150N15P
Description
MOSFET N-CH 150V 150A TO-247
Manufacturer
IXYS
Series
PolarHT™r
Datasheet

Specifications of IXFH150N15P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
13 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
150A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
5800pF @ 25V
Power - Max
714W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.013 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
150 A
Power Dissipation
714 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
150
Rds(on), Max, Tj=25°c, (?)
0.013
Ciss, Typ, (pf)
5800
Qg, Typ, (nc)
190
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
714
Rthjc, Max, (ºc/w)
0.21
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH150N15P
Manufacturer:
IXYS
Quantity:
35 500
IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
250
225
200
175
150
125
100
350
300
250
200
150
100
75
50
25
50
100
0
0
0.4
4
0
T
T
J
4.5
J
= 150
f = 1MHz
= 150
0.6
5
-40
25
Fig. 7. Input Adm ittance
Fig. 9. Source Current vs.
Fig. 11. Capacitance
Source-To-Drain Voltage
º
5
º
º
º
C
C
C
C
10
5.5
0.8
V
V
G S
15
S D
V
T
6
J
DS
- Volts
- Volts
= 25
1
20
- Volts
6.5
º
C
25
1.2
7
7.5
30
1.4
C
C
C
oss
rss
iss
8
35
8.5
1.6
40
1000
110
100
100
90
80
70
60
50
40
30
20
10
10
10
0
9
8
7
6
5
4
3
2
1
0
10
0
0
R
DS(on)
25
V
I
I
20
D
G
DS
= 75A
= 10mA
Fig. 8. Transconductance
DC
= 75V
50
40
Limit
Fig. 10. Gate Charge
Fig. 12. Forw ard-Bias
Safe Operating Area
Q
75
60
10ms
G
I
100 125 150 175 200 225 250
- nanoCoulombs
T
D
80
V
J
- Amperes
D S
= -40
1ms
150
25
100 120 140 160 180 200
100
- Volts
º
º
º
C
C
C
IXFH 150N15P
IXFK 150N15P
100µs
25µs
T
T
J
C
= 175
= 25
º
º
C
C
1000

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