IRFP90N20DPBF International Rectifier, IRFP90N20DPBF Datasheet

MOSFET N-CH 200V 94A TO-247AC

IRFP90N20DPBF

Manufacturer Part Number
IRFP90N20DPBF
Description
MOSFET N-CH 200V 94A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRFP90N20DPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
23 mOhm @ 56A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
94A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
270nC @ 10V
Input Capacitance (ciss) @ Vds
6040pF @ 25V
Power - Max
580W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Current, Drain
94 A
Gate Charge, Total
180 nC
Package Type
TO-247AC
Polarization
N-Channel
Power Dissipation
580 W
Resistance, Drain To Source On
0.023 Ohm
Resistance, Thermal, Junction To Case
0.26 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
43 ns
Time, Turn-on Delay
23 ns
Transconductance, Forward
39 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Drain To Source
200 V
Voltage, Forward, Diode
1.5 V
Voltage, Gate To Source
±30 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
94 A
Mounting Style
Through Hole
Gate Charge Qg
180 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFP90N20DPBF

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l
l
l
l
l
Thermal Resistance
www.irf.com
Applications
Absolute Maximum Ratings
Benefits
Notes
I
I
I
P
V
dv/dt
T
T
R
R
R
D
D
DM
J
STG
D
GS
θJC
θCS
θJA
@ T
@ T
Effective C
App. Note AN1001)
and Current
High frequency DC-DC converters
Lead-Free
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
@T
Switching Losses

C
C
C
= 25°C
= 100°C
= 25°C
through
OSS
o
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
to Simplify Design, (See
are on page 8
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
IRFP90N20DPbF
V
200V
DSS
Typ.
300 (1.6mm from case )
0.24
–––
–––
10 lbf•in (1.1N•m)
HEXFET Power MOSFET
-55 to + 175
R
Max.
380
580
± 30
3.8
6.7
94
DS(on)
66
o
0.023Ω
TO-247AC
Max.
0.26
max
–––
40
PD - 95664
94A
Units
Units
W/°C
°C/W
V/ns
°C
W
I
A
V
D
1
o

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IRFP90N20DPBF Summary of contents

Page 1

... Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA  o Notes through are on page 8 www.irf.com SMPS MOSFET IRFP90N20DPbF HEXFET Power MOSFET V DSS 200V @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.24 ––– ...

Page 2

... IRFP90N20DPbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... BOTTOM 5.0V 5. 100 0.1 Fig 2. Typical Output Characteristics 3 3 175°C 2.5 2.0 1.5 1.0 0.5 0.0 13.0 15.0 -60 -40 Fig 4. Normalized On-Resistance IRFP90N20DPbF VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 20µs PULSE WIDTH Tj = 175° Drain-to-Source Voltage (V) 94A - 100 120 140 160 180 ° ...

Page 4

... IRFP90N20DPbF 1000000 0V, C iss = rss = C gd 100000 C oss = 10000 Ciss Coss 1000 Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000. 175°C 100. 25°C 10.00 1.00 0.10 0.0 0.5 1.0 1 Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 12 ...

Page 5

... RESPONSE) 0.001 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRFP90N20DPbF + - ≤ 1 ≤ 0 d(on) r d(off Notes: 1. Duty factor ...

Page 6

... IRFP90N20DPbF D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 2100 15V DRIVER 1680 + 1260 840 420 Starting T , Junction Temperature Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit ...

Page 7

... Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® Power MOSFETs IRFP90N20DPbF + - V =10V ...

Page 8

... IRFP90N20DPbF EXAMPLE: T HIS IS AN IRFPE30 WIT H AS SEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 ASS EMB LY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 0.64mH 25Ω 56A ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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