STB35N65M5 STMicroelectronics, STB35N65M5 Datasheet

MOSFET N-CH 650V 27A D2PAK

STB35N65M5

Manufacturer Part Number
STB35N65M5
Description
MOSFET N-CH 650V 27A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STB35N65M5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
98 mOhm @ 13.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
83nC @ 10V
Input Capacitance (ciss) @ Vds
3750pF @ 100V
Power - Max
160W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.098 Ohm
Drain-source Breakdown Voltage
650 V
Continuous Drain Current
17 A, 27 A
Power Dissipation
160 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
83 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10565-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB35N65M5
Manufacturer:
ST
0
Part Number:
STB35N65M5
Manufacturer:
ST
Quantity:
20 000
Features
1. Limited only by maximum temperature allowed
Application
Description
MDmesh™ V is a revolutionary Power MOSFET
technology based on an innovative proprietary
vertical process, which is combined with
STMicroelectronics' well-known PowerMESH™
horizontal layout structure. The resulting product
has extremely low on-resistance, which is
unmatched among silicon-based Power
MOSFETs, making it especially suitable for
applications which require superior power density
and outstanding efficiency.
Table 1.
September 2009
STW35N65M5
STB35N65M5
STF35N65M5
STP35N65M5
STI35N65M5
Worldwide best R
Higher V
Excellent switching performance
Easy to drive
100% avalanche tested
High dv/dt capability
Switching applications
N-channel 650 V, 0.085 Ω, 27 A, MDmesh™ V Power MOSFET
Type
STW35N65M5
STB35N65M5
STP35N65M5
STF35N65M5
Order codes
STI35N65M5
DSS
Device summary
rating
STB35N65M5, STF35N65M5, STI35N65M5
V
T
710 V
710 V
710 V
710 V
710 V
DSS
JMAX
DS(on)
@
* area
R
< 0.098 Ω
< 0.098 Ω
< 0.098 Ω
< 0.098 Ω
< 0.098 Ω
DS(on)
in D
35N65M5
35N65M5
35N65M5
35N65M5
35N65M5
Marking
max
2
PAK, I
27 A
Doc ID 15325 Rev 2
27 A
27 A
27 A
27 A
I
STP35N65M5, STW35N65M5
D
(1)
2
PAK, TO-220FP, TO-220, TO-247
Figure 1.
D²PAK
TO-220FP
Package
TO-220
TO-247
TO-220
D²PAK
I²PAK
1
3
Internal schematic diagram
1
2
3
TO-220FP
1
2
3
Tape and reel
Packaging
TO-247
Tube
Tube
Tube
Tube
I²PAK
www.st.com
1
2
1 2
1/18
3
3
18

Related parts for STB35N65M5

STB35N65M5 Summary of contents

Page 1

... STB35N65M5, STF35N65M5, STI35N65M5 N-channel 650 V, 0.085 Ω MDmesh™ V Power MOSFET Features V @ DSS Type R T JMAX STB35N65M5 710 V STF35N65M5 710 V STI35N65M5 710 V STP35N65M5 710 V STW35N65M5 710 V 1. Limited only by maximum temperature allowed ■ Worldwide best R * area DS(on) ■ Higher V rating DSS ■ ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB/F/I/P/W35N65M5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT ...

Page 4

Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) C Table 4. On /off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate ...

Page 5

STB/F/I/P/W35N65M5 Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D²PAK I D (A) 100 10 1 0.1 0 Figure 4. Safe operating area for TO-220FP I D (A) 100 10 1 0.1 0.01 10 ...

Page 7

STB/F/I/P/W35N65M5 Figure 8. Output characteristics I D (A) V =10V Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance V GS (V) V =520V ...

Page 8

Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -50 - Figure 16. Source-drain diode forward characteristics V SD (V) T =-50°C J 1.2 1.0 0.8 0.6 T ...

Page 9

STB/F/I/P/W35N65M5 3 Test circuits Figure 19. Switching times test circuit for resistive load D.U. Figure 21. Test circuit for inductive load switching and diode recovery times ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

Page 11

STB/F/I/P/W35N65M5 Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 ...

Page 12

Package mechanical data Dim 12/18 TO-220FP mechanical data ...

Page 13

STB/F/I/P/W35N65M5 Dim øP øR S TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID ...

Page 14

Package mechanical data Dim 14/18 I²PAK (TO-262) mechanical data mm Min Typ Max 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 0.70 1.23 1.32 8.95 9.35 ...

Page 15

STB/F/I/P/W35N65M5 Dim D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 4.60 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 ...

Page 16

Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 ...

Page 17

STB/F/I/P/W35N65M5 6 Revision history Table 8. Document revision history Date 29-Jul-2009 01-Sep-2009 Revision 1 First release Figure 10 2 has been updated Doc ID 15325 Rev 2 Revision history Changes 17/18 ...

Page 18

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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