IXFH70N15 IXYS, IXFH70N15 Datasheet
IXFH70N15
Manufacturer Part Number
IXFH70N15
Description
MOSFET N-CH 150V 70A TO-247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH70N15.pdf
(2 pages)
Specifications of IXFH70N15
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
3600pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.028 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
70 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
70
Rds(on), Max, Tj=25°c, (?)
0.028
Ciss, Typ, (pf)
3600
Qg, Typ, (nc)
180
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH70N15
Manufacturer:
IXYS
Quantity:
489
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
© 2003 IXYS All rights reserved
DM
AR
D25
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
J
= 25 C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
Test Conditions
V
V
V
V
V
Pulse test, t
V
S
J
J
C
C
C
C
C
J
C
GS
GS
GS
DS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
TM
GS
, di/dt 100 A/ s, V
DSS
, I
D
D
DC
D
=
= mA
, V
= 0.5 I
300 s, duty cycle d
G
= 2
DS
= 0
A
D25
GS
= 1 M
DD
T
T
J
rr
J
V
= 125 C
= 25 C
DSS
,
JM
2 %
IXFH 70N15
IXFT 70N15
150
Min. Typ.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
150
150
280
300
150
300
1.0
20
30
70
70
30
5
6
4
100
750
Max.
4.0
25
28
V/ns
m
mJ
nA
W
C
C
C
C
A
A
V
V
V
V
A
A
A
g
g
V
V
J
Features
Advantages
TO-247 AD (IXFH)
TO-268 (IXFT) Case Style
G = Gate
S = Source
V
R
I
t
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Easy to mount
Space savings
High power density
D25
rr
DSS
DS(on)
DS (on)
250ns
G
HDMOS
= 150
=
=
D = Drain
TAB = Drain
S
TM
70
28 m
DS98583B(01/03)
process
V
A
(TAB)
(TAB)
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IXFH70N15 Summary of contents
Page 1
... GS(th GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d © 2003 IXYS All rights reserved IXFH 70N15 IXFT 70N15 rr Maximum Ratings 150 = 1 M 150 280 1 DSS 300 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in Characteristic Values Min. Typ. Max. ...
Page 2
... 25A,-di/dt = 100 Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J Min. Typ. Max. , pulse test 30 45 3600 ...