IXFH66N20Q IXYS, IXFH66N20Q Datasheet

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IXFH66N20Q

Manufacturer Part Number
IXFH66N20Q
Description
MOSFET N-CH 200V 66A TO-247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFH66N20Q

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
40 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
66A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
105nC @ 10V
Input Capacitance (ciss) @ Vds
3700pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.04 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
66 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
66
Rds(on), Max, Tj=25°c, (?)
0.04
Ciss, Typ, (pf)
3700
Qg, Typ, (nc)
105
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
400
Rthjc, Max, (ºc/w)
0.31
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH66N20Q
Manufacturer:
IXYS
Quantity:
500
Part Number:
IXFH66N20Q
Manufacturer:
IXYS
Quantity:
15 500
HiPerFET
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Q
Preliminary data sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
© 2003 IXYS All rights reserved
DM
AR
D25
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
D
GS(th)
DSS
AS
DSS
DS(on)
d
J
= 25 C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-268
Test Conditions
V
V
V
V
V
Pulse test, t
V
S
J
J
C
C
C
C
C
J
C
GS
GS
DS
GS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 30 V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
TM
GS
, di/dt
DSS
, I
D
D
DC
D
= 250 A
= 4 mA
, V
= 0.5 I
300 s, duty cycle d
G
100 A/ s, V
= 2
DS
= 0
D25
GS
= 1 M
DD
T
T
J
J
g
= 125 C
= 25 C
V
DSS
JM
,
2 %
IXFH 66N20Q
IXFT 66N20Q
200
Min. Typ.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
200
200
264
400
150
300
1.5
30
40
66
66
40
20
6
4
100
Max.
4.0
25
40
1
V/ns
m
mA
mJ
nA
W
V
V
A
A
A
C
C
C
C
A
V
V
g
g
V
V
J
TO-268 (D3) (IXFT) Case Style
TO-247 AD
G = Gate
S = Source
Features
Advantages
V
I
R
t
D25
rr
IXYS advanced low Q
International standard packages
Low gate charge and capacitance
- easier to drive
- faster switching
Low R
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
Easy to mount
Space savings
High power density
DSS
DS(on)
200 ns
DS (on)
G
= 200
=
=
D = Drain
TAB = Drain
S
66
40 m
g
DS99039(04/03)
process
V
A
(TAB)
(TAB)

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IXFH66N20Q Summary of contents

Page 1

... GS(th GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d © 2003 IXYS All rights reserved IXFH 66N20Q IXFT 66N20Q g Maximum Ratings 200 = 1 M 200 264 1 DSS 400 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in Characteristic Values Min. Typ. Max. ...

Page 2

... 25A, -di/dt = 100 Min. Recommended Footprint Dimensions in mm and inches IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J Min. Typ. Max. , pulse test ...

Page 3

... V - Volts DS Fig. 3. Output Characteristics @ 125 Deg Volts DS Fig Normalized to I DS(on) Value vs Amperes D © 2003 IXYS All rights reserved 6V 5V 2 D25 D º C º IXFH 66N20Q IXFT 66N20Q Fig. 2. Extended Output Characteristics @ 25 deg Volts D S Fig Normalized to I Value vs. ...

Page 4

... Fig. 11. Capacitance 1 0000 iss 1 000 C oss C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 5.5 6 6.5 7 º 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 ...

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