IRFP470 IXYS, IRFP470 Datasheet
IRFP470
Manufacturer Part Number
IRFP470
Description
MOSFET N-CH 500V 24A TO-247AD
Manufacturer
IXYS
Series
MegaMOS™r
Datasheet
1.IRFP470.pdf
(2 pages)
Specifications of IRFP470
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
4200pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.23 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
24 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
24
Rds(on), Max, Tj=25°c, (?)
0.23
Ciss, Typ, (pf)
4200
Qg, Typ, (nc)
160
Trr, Typ, (ns)
600
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFP470
Manufacturer:
IXYS
Quantity:
5 000
Company:
Part Number:
IRFP470
Manufacturer:
PHILIPS
Quantity:
6 000
MegaMOS
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
V
I
I
R
AR
D25
DM
GSS
DSS
JM
DSS
DGR
GS
GSM
AR
J
stg
DSS
GS(th)
D
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
I
T
T
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t 300 s, duty cycle d 2 %
S
V
J
J
J
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
150 C, R
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
I
DM
TM
, di/dt 100 A/ s, V
GS
, I
FET
D
D
DC
= 250 A
D
= 250 A
DSS
G
, V
= 0.5 • I
= 2
DS
= 0
D25
GS
= 1 M
DD
T
T
J
J
(T
= 25 C
= 125 C
V
DSS
J
= 25 C, unless otherwise specified)
JM
,
min.
500
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
IRFP 470
500
500
300
150
300
20
30
24
96
24
30
5
6
max.
0.23
100
250
25
4
V/ns
mJ
nA
W
V
V
V
V
A
A
A
V
V
g
C
C
C
C
A
A
V
I
R
Features
l
l
l
l
l
Applications
l
l
l
l
Advantages
l
l
l
TO-247 AD
G = Gate,
S = Source,
D (cont)
International standard packages
Low R
Rugged polysilicon gate cell structure
High commutating dv/dt rating
Fast switching times
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
DSS
DS(on)
DS (on)
= 500 V
= 24 A
= 0.23
HDMOS
D = Drain,
TAB = Drain
TM
process
D (TAB)
92605E(5/97)
1 - 2
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IRFP470 Summary of contents
Page 1
... GSS 0.8 • V DSS DS DSS 0.5 • I DS(on Pulse test, t 300 s, duty cycle IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IRFP 470 Maximum Ratings 500 = 1 M 500 DSS 300 -55 ... +150 150 -55 ...
Page 2
... DSS D D25 75 0.42 0.25 Characteristic Values ( unless otherwise specified) J min. typ. max 100 V 600 R IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IRFP 470 TO-247 AD Outline Terminals Gate 2 - Drain ...