IXFH75N10Q IXYS, IXFH75N10Q Datasheet
IXFH75N10Q
Manufacturer Part Number
IXFH75N10Q
Description
MOSFET N-CH 100V 75A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH75N10Q.pdf
(2 pages)
Specifications of IXFH75N10Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
3700pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.02 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
75
Rds(on), Max, Tj=25°c, (?)
0.02
Ciss, Typ, (pf)
3700
Qg, Typ, (nc)
140
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH75N10Q
Manufacturer:
IXYS
Quantity:
35 500
HiPerFET
Power MOSFETs
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J
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GS
DS
GS
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TM
GS
DSS
D
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DS
D25
GS
DD
J
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DSS
JM
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DSS
DS(on)
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DS (on)
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