STW32N65M5 STMicroelectronics, STW32N65M5 Datasheet

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STW32N65M5

Manufacturer Part Number
STW32N65M5
Description
MOSFET N-CH 650V 24A TO-247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STW32N65M5

Package / Case
TO-247
Mounting Type
Through Hole
Power - Max
150W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
72nC @ 10V
Vgs(th) (max) @ Id
5V @ 250µA
Current - Continuous Drain (id) @ 25° C
24A
Drain To Source Voltage (vdss)
650V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
119 mOhm @ 12A, 10V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Quantity
Price
Part Number:
STW32N65M5
Manufacturer:
ST
Quantity:
30 000
Part Number:
STW32N65M5
Manufacturer:
ST
0
Part Number:
STW32N65M5,32N65
Manufacturer:
ST
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Features
1. Limited only by maximum temperature allowed
Application
Description
MDmesh V is a revolutionary Power MOSFET
technology, which combines an innovative
proprietary vertical process with the well known
company’s PowerMESH™ horizontal layout. The
resulting product has an extremely low on-
resistance, unmatched among silicon-based
Power MOSFETs, making it especially suited for
applications which require superior power density
and outstanding efficiencies.
Table 1.
September 2009
STW32N65M5
STB32N65M5
STF32N65M5
STP32N65M5
STI32N65M5
Worldwide best R
Higher V
High dv/dt capability
Excellent switching performance
Easy to drive
100% avalanche tested
Switching applications
Type
STW32N65M5
STB32N65M5
STP32N65M5
N-channel 650 V, 0.095 Ω , 24 A, MDmesh™ V Power MOSFET
STF32N65M5
Order codes
STI32N65M5
DSS
Device summary
rating
STB32N65M5, STF32N65M5, STI32N65M5
V
T
710 V
710 V
710 V
710 V
710 V
DSS
Jmax
DS(on)
@
* area
R
< 0.119 Ω
< 0.119 Ω
< 0.119 Ω
< 0.119 Ω
< 0.119 Ω
DS(on)
in D
max
32N65M5
32N65M5
32N65M5
32N65M5
32N65M5
Marking
2
PAK, I
24 A
24 A
24 A
24 A
24 A
Doc ID 15316 Rev 3
I
D
STP32N65M5, STW32N65M5
(1)
2
PAK, TO-220FP, TO-220, TO-247
Figure 1.
D²PAK
TO-220FP
Package
TO-220
TO-247
TO-220
D²PAK
I²PAK
1
3
Internal schematic diagram
1
2
3
TO-220FP
1
2
3
Tape and reel
Packaging
TO-247
Tube
Tube
Tube
Tube
I²PAK
www.st.com
1
2
1 2
1/18
3
3
18

Related parts for STW32N65M5

STW32N65M5 Summary of contents

Page 1

... Power MOSFETs, making it especially suited for applications which require superior power density and outstanding efficiencies. Table 1. Device summary Order codes STB32N65M5 STF32N65M5 STI32N65M5 STP32N65M5 STW32N65M5 September 2009 STP32N65M5, STW32N65M5 PAK, I PAK, TO-220FP, TO-220, TO-247 max D²PAK ( ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB/F/I/P/W32N65M5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Gate- source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T ...

Page 4

Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) C Table 4. On /off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate ...

Page 5

STB/F/I/P/W32N65M5 Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D²PAK, I²PAK Tj=150°C Tc=25°C Sinlge pulse 0.1 0 Figure 4. Safe operating area for TO-247 ...

Page 7

STB/F/I/P/W32N65M5 Figure 8. Output characteristics I D (A) V =10V Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance V GS (V) V =520V ...

Page 8

Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -50 - Figure 16. Source-drain diode forward characteristics V SD (V) T =-50°C J 1.2 1.0 0.8 0.6 T ...

Page 9

STB/F/I/P/W32N65M5 3 Test circuits Figure 19. Switching times test circuit for resistive load D.U. Figure 21. Test circuit for inductive load switching and diode recovery times ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

Page 11

STB/F/I/P/W32N65M5 Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 ...

Page 12

Package mechanical data Dim 12/18 TO-220FP mechanical data ...

Page 13

STB/F/I/P/W32N65M5 Dim øP øR S TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID ...

Page 14

Package mechanical data Dim 14/18 I²PAK (TO-262) mechanical data mm Min Typ Max 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 0.70 1.23 1.32 8.95 9.35 ...

Page 15

STB/F/I/P/W32N65M5 Dim D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 4.60 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 ...

Page 16

Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 ...

Page 17

STB/F/I/P/W32N65M5 6 Revision history Table 8. Document revision history Date 16-Jan-2009 01-Sep-2009 30-Sep-2009 Revision 1 First release 2 Document status promoted from preliminary data to datasheet. 3 Corrected V value on GS Doc ID 15316 Rev 3 Revision history Changes ...

Page 18

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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