IXTH30N25

Manufacturer Part NumberIXTH30N25
DescriptionMOSFET N-CH 250V 30A TO-247
ManufacturerIXYS
IXTH30N25 datasheet
 

Specifications of IXTH30N25

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs75 mOhm @ 15A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C30AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs136nC @ 10VInput Capacitance (ciss) @ Vds3950pF @ 25V
Power - Max200WMounting TypeThrough Hole
Package / CaseTO-247ADConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.075 Ohms
Drain-source Breakdown Voltage250 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current30 APower Dissipation200 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CVdss, Max, (v)250
Id(cont), Tc=25°c, (a)30Rds(on), Max, Tj=25°c, (?)0.075
Ciss, Typ, (pf)-Qg, Typ, (nc)-
Trr, Typ, (ns)-Pd, (w)-
Rthjc, Max, (k/w)-Package StyleTO-247
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Standard
Power MOSFET
N-Channel Enhancement Mode
Symbol
Test Conditions
V
T
= 25 C to 150 C
DSS
J
V
T
= 25 C to 150 C; R
DGR
J
GS
V
Continuous
GS
V
Transient
GSM
I
T
= 25 C
D25
C
I
T
= 25 C, pulse width limited by T
DM
C
I
AR
E
T
= 25 C
AR
C
E
T
= 25 C
AS
C
dv/dt
I
I
, di/dt 100 A/ s, V
S
DM
T
150 C, R
= 2
J
G
P
T
= 25 C
D
C
T
J
T
JM
T
stg
M
Mounting torque
d
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
V
V
= 0 V, I
= 250 A
DSS
GS
D
V
V
= V
, I
= 250 A
GS(th)
DS
GS
D
I
V
= 20 V
, V
= 0
GSS
GS
DC
DS
I
V
= V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10 V, I
= 15 A
DS(on)
GS
D
Pulse test, t
300 s, duty cycle d
© 2001 IXYS All rights reserved
Advance Technical Information
IXTH 30N25
Maximum Ratings
250
= 1 M
250
20
30
30
120
JM
30
30
1.0
V
,
5
DD
DSS
200
-55 ... +150
150
-55 ... +150
1.13/10 Nm/lb.in.
6
300
Characteristic Values
(T
= 25 C, unless otherwise specified)
J
min.
typ.
max.
250
2
100
25
T
= 125 C
250
J
55
75 m
2 %
V
= 250 V
DSS
I
=
30 A
D (cont)
R
=
75 m
DS(on)
TO-247 AD
V
V
V
V
A
A
A
G = Gate,
D = Drain,
mJ
S = Source,
TAB = Drain
J
V/ns
W
C
C
Features
C
l
International standard package
JEDEC TO-247 AD
g
l
Low R
HDMOS
TM
process
DS (on)
l
Rugged polysilicon gate cell structure
C
l
High commutating dv/dt rating
l
Fast switching times
Applications
l
Switch-mode and resonant-mode
power supplies
l
Motor controls
V
l
Uninterruptible Power Supplies (UPS)
4
V
l
DC choppers
nA
Advantages
A
A
l
Easy to mount with 1 screw
(isolated mounting screw hole)
l
Space savings
l
High power density
D (TAB)
98872 (12/01)

IXTH30N25 Summary of contents

  • Page 1

    ... GS(th GSS DSS DS DSS DS(on Pulse test, t 300 s, duty cycle d © 2001 IXYS All rights reserved Advance Technical Information IXTH 30N25 Maximum Ratings 250 = 1 M 250 120 1 DSS 200 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 6 300 Characteristic Values ( unless otherwise specified) J min. ...

  • Page 2

    ... Test Conditions Repetitive; pulse width limited Pulse test, t 300 s, duty cycle -di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. Characteristic Values ( unless otherwise specified) J min. typ. max 3950 510 177 30A 19 DSS 136 , DSS D D25 52 0.65 ...