IXTH30N50 IXYS, IXTH30N50 Datasheet

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IXTH30N50

Manufacturer Part Number
IXTH30N50
Description
MOSFET N-CH 500V 30A TO-247
Manufacturer
IXYS
Series
MegaMOS™r
Datasheet

Specifications of IXTH30N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
170 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
227nC @ 10V
Input Capacitance (ciss) @ Vds
5680pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.17 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.17
Ciss, Typ, (pf)
5680
Qg, Typ, (nc)
227
Trr, Typ, (ns)
850
Pd, (w)
360
Rthjc, Max, (k/w)
0.35
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTH30N50
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXTH30N50P
Manufacturer:
IXYS
Quantity:
5 000
Part Number:
IXTH30N50P
Manufacturer:
IXYS
Quantity:
18 000
MegaMOS
N-Channel Enhancement Mode
Symbol
V
V
I
I
R
Symbol
V
V
V
V
I
I
P
T
T
T
T T T T T
M
Weight
© 2002 IXYS All rights reserved
DM
GSS
DSS
D25
JM
GSM
J
stg
L L L L L
GS(th)
GS
D
D G R
D S S
D S S
d
D S ( o n )
Test Conditions
V
BV
V
V
V
V
V
V
Pulse test, t
Test Conditions
T
T
Continuous
Transient
T
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
C
C
C
GS
DS
GS
DS
GS
GS
J
J
GS(th)
DSS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
temperature coefficient
temperature coefficient
GS
TM
, I
D
D
DC
FET
D
= 5 mA
= 250 A
DSS
, V
300 s, duty cycle d
= 0.5 • I
DS
= 0
D25
GS
= 1 M
T
T
(T
J
J
J
= 25 C
= 125 C
= 25 C, unless otherwise specified)
30N50
JM
2 %
min.
500
Characteristic Values
IXTH 30N50 V V V V V
2
-55 ... +150
-55 ... +150
Maximum Ratings
-0.25
.087
1.13/10 Nm/lb.in.
typ.
500
500
120
360
150
300
20
30
30
6
max.
0.17
100
200
4
3
%/k
%/k
mA
nA
W
V
V
V
V
V
V
A
A
g
C
C
C
C
A
Features
Applications
Advantages
I I I I I
R R R R R
TO-247 AD
G = Gate,
S = Source,
D (cont)
International standard package
JEDEC TO-247 AD
Low R
Rugged polysilicon gate cell structure
Fast switching times
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw
(TO-247)
(isolated mounting screw hole)
Space savings
High power density
DSS
DS(on)
DS (on)
=
=
HDMOS
= 0.17
D = Drain,
TAB = Drain
0.17
0.17
0.17
500 V
500 V
500 V
0.17
500 V
500 V
30 A
30 A
30 A
30 A
30 A
TM
process
94569-E (8/02)
D (TAB)

Related parts for IXTH30N50

IXTH30N50 Summary of contents

Page 1

... GSS 0.8 • V DSS DS DSS 0.5 • D25 Pulse test, t 300 s, duty cycle d © 2002 IXYS All rights reserved IXTH 30N50 Maximum Ratings 500 = 1 M 500 120 JM 360 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. 6 Characteristic Values ( unless otherwise specified) J min. ...

Page 2

... GS Pulse test, t 300 s, duty cycle -di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. , pulse test 18 28 5680 ...

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