IXTH30N50

Manufacturer Part NumberIXTH30N50
DescriptionMOSFET N-CH 500V 30A TO-247
ManufacturerIXYS
SeriesMegaMOS™
IXTH30N50 datasheet
 


Specifications of IXTH30N50

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs170 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C30AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs227nC @ 10VInput Capacitance (ciss) @ Vds5680pF @ 25V
Power - Max360WMounting TypeThrough Hole
Package / CaseTO-247ADConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.17 Ohms
Drain-source Breakdown Voltage500 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current30 APower Dissipation360 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CVdss, Max, (v)500
Id(cont), Tc=25°c, (a)30Rds(on), Max, Tj=25°c, (?)0.17
Ciss, Typ, (pf)5680Qg, Typ, (nc)227
Trr, Typ, (ns)850Pd, (w)360
Rthjc, Max, (k/w)0.35Package StyleTO-247
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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TM
MegaMOS
FET
N-Channel Enhancement Mode
Symbol
Test Conditions
V
T
= 25 C to 150 C
D S S
J
V
T
= 25 C to 150 C; R
D G R
J
V
Continuous
GS
V
Transient
GSM
I
T
= 25 C
D25
C
I
T
= 25 C, pulse width limited by T
DM
C
P
T
= 25 C
D
C
T
J
T
JM
T
stg
T T T T T
1.6 mm (0.063 in) from case for 10 s
L L L L L
M
Mounting torque
d
Weight
Symbol
Test Conditions
V
V
= 0 V, I
= 5 mA
D S S
GS
D
BV
temperature coefficient
DSS
V
V
= V
, I
= 250 A
GS(th)
DS
GS
D
V
temperature coefficient
GS(th)
I
V
= 20 V
, V
= 0
GSS
GS
DC
DS
I
V
= 0.8 • V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10 V, I
= 0.5 • I
D S ( o n )
GS
D
D25
Pulse test, t
300 s, duty cycle d
© 2002 IXYS All rights reserved
IXTH 30N50 V V V V V
Maximum Ratings
500
= 1 M
500
GS
20
30
30
120
JM
360
-55 ... +150
150
-55 ... +150
300
1.13/10 Nm/lb.in.
6
Characteristic Values
(T
= 25 C, unless otherwise specified)
J
min.
typ.
max.
500
.087
2
-0.25
100
T
= 25 C
200
J
T
= 125 C
J
30N50
0.17
2 %
500 V
500 V
500 V
500 V
500 V
=
DSS
I I I I I
30 A
30 A
30 A
30 A
30 A
=
D (cont)
R R R R R
0.17
0.17
= 0.17
0.17
0.17
DS(on)
TO-247 AD
V
V
V
V
A
A
W
G = Gate,
D = Drain,
S = Source,
TAB = Drain
C
C
C
C
Features
International standard package
g
JEDEC TO-247 AD
Low R
HDMOS
TM
process
DS (on)
Rugged polysilicon gate cell structure
Fast switching times
Applications
Switch-mode and resonant-mode
power supplies
Motor controls
V
%/k
Uninterruptible Power Supplies (UPS)
4
V
DC choppers
%/k
nA
Advantages
A
Easy to mount with 1 screw
3
mA
(TO-247)
(isolated mounting screw hole)
Space savings
High power density
D (TAB)
94569-E (8/02)

IXTH30N50 Summary of contents

  • Page 1

    ... GSS 0.8 • V DSS DS DSS 0.5 • D25 Pulse test, t 300 s, duty cycle d © 2002 IXYS All rights reserved IXTH 30N50 Maximum Ratings 500 = 1 M 500 120 JM 360 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. 6 Characteristic Values ( unless otherwise specified) J min. ...

  • Page 2

    ... GS Pulse test, t 300 s, duty cycle -di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. , pulse test 18 28 5680 ...