IXFH12N100Q IXYS, IXFH12N100Q Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFH12N100Q
Manufacturer Part Number
IXFH12N100Q
Description
MOSFET N-CH 1000V 12A TO-247AD
Specifications of IXFH12N100Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.05 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5.5V @ 4mA
Gate Charge (qg) @ Vgs
90nC @ 10V
Input Capacitance (ciss) @ Vds
2900pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
12
Rds(on), Max, Tj=25°c, (?)
1.05
Ciss, Typ, (pf)
2900
Qg, Typ, (nc)
90
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
300
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
Power MOSFETs
Q Class
N-Channel Enhancement Mode
Avalanche Rated
Low Q
Symbol
V
V
I
I
R
© 2002 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
GSS
DSS
DM
D25
AR
J
JM
stg
L
DSS
GS(th)
DS(on)
DGR
GS
GSM
AR
D
DSS
d
g
, High dv/dt
Test Conditions
V
V
V
V
V
V
Pulse test, t
Test Conditions
T
T
Continuous
Transient
T
T
pulse width limited by T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
S
GS
DS
GS
DS
GS
GS
J
J
C
C
C
C
J
C
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C,
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
150 C, R
I
TM
DM
GS
, di/dt 100 A/ s, V
, I
D
D
DC
D
= 3 mA
= 4 mA
DSS
, V
= 0.5 I
300 s, duty cycle d
G
= 2
DS
= 0
D25
GS
JM
= 1 M
DD
(T
T
T
12N100Q
10N100Q
IXFH/IXFT12N100Q
IXFH/IXFT10N100Q
J
J
J
V
= 25 C
= 125 C
12N100Q
10N100Q
12N100Q
10N100Q
12N100Q
10N100Q
= 25 C, unless otherwise specified)
DSS
,
TO-247 AD
TO-268
2 %
1000
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
300
300
Maximum Ratings
typ.
1000
1000
1.13/10 Nm/lb.in.
12
10
48
40
12
10
20
30
30
5
150
6
4
1.05
1.20
100
max.
5.5
50
1
V/ns
mJ
mA
W
nA
g
g
C
C
C
C
V
V
V
V
V
V
A
A
A
A
A
A
A
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G = Gate
S = Source
Features
Advantages
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
Easy to mount
Space savings
High power density
1000 V 12 A 1.05
1000 V 10 A 1.20
t
rr
V
DSS
DS (on)
250 ns
G
I
S
D25
TAB = Drain
D
= Drain
g
process
97539D(12/02)
R
DS(on)
(TAB)
Related parts for IXFH12N100Q
IXFH12N100Q Summary of contents
... GS(th GSS 0.8 • V DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d © 2002 IXYS All rights reserved IXFH/IXFT12N100Q IXFH/IXFT10N100Q Maximum Ratings 1000 = 1 M 1000 12N100Q 12 10N100Q 10 12N100Q 48 10N100Q 40 JM 12N100Q 12 10N100Q DSS 300 -55 ... +150 150 -55 ... +150 300 1 ...
... Pulse test, t 300 s, duty cycle -di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. , pulse test 4 10 2900 315 50 ...
... Figure 1. Output Characteristics 10V 2 125 J 1.8 1.6 1 1.2 J 1.0 0 Amperes D Figure 3. R normalized to value at I DS(on -50 - Degrees C C Figure 5. Drain Current vs. Case Temperature © 2002 IXYS All rights reserved = 10V 12A D 75 100 125 150 IXFH/IXFT 12N100Q IXFH/IXFT 10N100Q 10V T = 125 ...
... D=0.2 D=0.1 D=0.05 Single pulse D=0.02 0.01 D=0.01 0.001 - IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 5000 2500 1000 500 250 100 50 80 100 100 ...
Related keywords
ixfh12n100 ixfh170n10p ixfh15n80 ixfh13n80 ixfh12n120 ixfh12n100q ixfh12n100f ixfh16n50p ixfh13n50 ixfh12n120p ixfh12n100p IXFH12N100Q datasheet IXFH12N100Q data sheet IXFH12N100Q pdf datasheet IXFH12N100Q component IXFH12N100Q part IXFH12N100Q distributor IXFH12N100Q RoHS IXFH12N100Q datasheet download
