IXTK600N04T2 IXYS, IXTK600N04T2 Datasheet

MOSFET N-CH 40V 600A TO-264

IXTK600N04T2

Manufacturer Part Number
IXTK600N04T2
Description
MOSFET N-CH 40V 600A TO-264
Manufacturer
IXYS
Series
TrenchT2™ GigaMOS™r
Type
TrenchT2 GigaMOSr
Datasheet

Specifications of IXTK600N04T2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
600A
Vgs(th) (max) @ Id
3.5V @ 250µA
Gate Charge (qg) @ Vgs
590nC @ 10V
Input Capacitance (ciss) @ Vds
40000pF @ 25V
Power - Max
1250W
Mounting Type
Through Hole
Package / Case
TO-264
Product
MOSFET Gate Drivers
Rise Time
20 ns
Fall Time
250 ns
Supply Current
200 A
Maximum Power Dissipation
1250 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Maximum Turn-off Delay Time
90 ns
Maximum Turn-on Delay Time
40 ns
Minimum Operating Temperature
- 55 C
Number Of Drivers
Single
Number Of Outputs
1
Output Current
600 A
Output Voltage
40 V
Vdss, Max, (v)
40
Id(cont), Tc=25°c, (a)
600
Rds(on), Max, Tj=25°c, (?)
0.0015
Ciss, Typ, (pf)
40000
Qg, Typ, (nc)
590
Trr, Typ, (ns)
100
Pd, (w)
1250
Rthjc, Max, (k/w)
0.12
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchT2
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
I
I
I
I
E
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
L(RMS)
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Transient
T
External Lead Current Limit
T
T
T
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C (Chip Capability)
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
TM
= 0V, I
= V
= ± 20V, V
= V
= 10V, I
GS
GigaMOS
DSS
, I
D
, V
D
D
= 250µA
= 250µA
= 100A, Notes 1 & 2
GS
DS
= 0V
= 0V
(PLUS247)
GS
= 1MΩ
TM
Advance Technical Information
T
J
= 150°C
JM
IXTK600N04T2
IXTX600N04T2
20..120 /4.5..27
Min.
Characteristic Values
40
1.5
-55 ... +175
-55 ... +175
Maximum Ratings
1.13/10
1600
1250
± 20
Typ.
600
160
200
175
300
260
40
40
10
3
6
± 200
Nm/lb.in.
Max.
3.5
1.5 mΩ
10
1
N/lb.
mA
µA
nA
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
A
V
V
g
g
J
V
I
R
TO-264 (IXTK)
PLUS247 (IXTX)
G = Gate
S = Source
Features
Advantages
Applications
D25
International Standard Packages
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
DC-DC Converters and Off-Line UPS
Primary-Side Switch
High Speed Power Switching
Applications
Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
G
D
D
DS(on)
S
S
=
=
≤ ≤ ≤ ≤ ≤
D
Tab = Drain
40V
600A
1.5mΩ Ω Ω Ω Ω
= Drain
Tab
Tab
DS100209(11/09)

Related parts for IXTK600N04T2

IXTK600N04T2 Summary of contents

Page 1

... GSS DSS DS DSS 10V 100A, Notes 1 & 2 DS(on © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTK600N04T2 TM IXTX600N04T2 Maximum Ratings 40 = 1MΩ ± 20 600 160 1600 JM 200 3 1250 -55 ... +175 175 -55 ... +175 300 260 1.13/10 20..120 /4.5.. Characteristic Values Min ...

Page 2

... I 127 DSS D DSS 163 0.15 Characteristic Values Min. Typ. JM 100 3.3 165 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTK600N04T2 IXTX600N04T2 TO-264 (IXTK) Outline Max Ω Millimeter Dim. Min. Max 4.82 5.13 A1 2.54 2. 2.00 2 ...

Page 3

... Fig. 4. Normalized R vs. Junction Temperature DS(on) 2 10V GS 1.8 I < 600A D 1.6 1.4 1.2 1.0 0.8 0.6 -50 - Degrees Centigrade J Fig. 6. Drain Current vs. Case Temperature External Lead Current Limit -50 - Degrees Centigrade C IXTK600N04T2 IXTX600N04T2 = 25ºC J 2.0 2.5 3.0 100 125 150 175 100 125 150 175 ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 240 200 = 150ºC 25ºC 160 - 40ºC 120 80 40 4.0 4.5 5 25ºC J 0.7 0.8 0.9 1.0 1.1 10,000 C iss 1,000 C oss 100 C rss IXTK600N04T2 IXTX600N04T2 Fig. 8. Transconductance 100 120 I - Amperes D Fig. 10. Gate Charge V = 20V 300A 10mA ...

Page 5

... 20V 160 600 DS 140 500 120 400 100 300 80 200 100 60 40 140 160 180 200 IXTK600N04T2 IXTX600N04T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 1Ω 10V 20V 100 120 140 I - Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance Fig. 19. Maximum Transient Thermal Impedance .sadgsfgsf 0.001 0.01 Pulse Width - Seconds IXTK600N04T2 IXTX600N04T2 0.1 1 IXYS REF:T_600N04T2(V9)11-05-09 10 ...

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