IXFH15N100Q IXYS, IXFH15N100Q Datasheet
IXFH15N100Q
Manufacturer Part Number
IXFH15N100Q
Description
MOSFET N-CH 1000V 15A TO-247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFK15N100Q.pdf
(2 pages)
Specifications of IXFH15N100Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
700 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.7 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
15
Rds(on), Max, Tj=25°c, (?)
0.70
Ciss, Typ, (pf)
4500
Qg, Typ, (nc)
130
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
357
Rthjc, Max, (ºc/w)
0.35
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH15N100Q
Manufacturer:
IXYS
Quantity:
18 000
Company:
Part Number:
IXFH15N100Q3
Manufacturer:
LAMBDA
Quantity:
101
HiPerFET
Power MOSFETs
Q-Class
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Preliminary data sheet
Symbol
V
V
I
I
R
© 2001 IXYS All rights reserved
DM
AR
D25
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
DSS
GS(th)
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
V
Pulse test, t
S
J
J
C
C
C
C
C
J
C
GS
GS
GS
DS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
TM
, di/dt 100 A/ s, V
GS
DSS
, I
D
D
DC
= 250 A
= 4 mA
D
, V
300 s, duty cycle d
G
= 0.5 • I
= 2
DS
g
, High dv/dt
= 0
D25
GS
= 1 M
DD
T
T
(T
J
J
J
= 25 C
= 125 C
V
= 25 C, unless otherwise specified)
DSS
,
JM
2 %
TO-247
TO-264
TO-268
TO-264
TO-247
IXFH 15N100Q
IXFK 15N100Q
IXFT 15N100Q
1000
min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
1000
1000
0.9/6 Nm/lb.in.
360
150
300
1.5
20
30
15
60
15
45
10
5
6
4
max.
200
5.0
0.7
50
2
V/ns
mJ
mA
W
nA
V
V
V
V
A
A
A
V
V
C
C
C
C
A
g
g
g
J
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
TO-264 AA (IXFK)
G = Gate
S = Source
Features
Advantages
IXYS advanced low Q
International standard packages
classification
Low R
Avalanche energy and current rated
Fast intrinsic rectifier
Easy to mount
Space savings
High power density
Epoxy meet UL 94 V-0, flammability
V
I
R
t
D25
rr
DSS
DS(on)
DS (on)
250 ns
G
G
low Q
D
S
=
=
=
S
g
TAB = Drain
g
1000 V
process
98627A (9/01)
0.7
15 A
D (TAB)
(TAB)
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IXFH15N100Q Summary of contents
Page 1
... GSS DSS DS DSS 0.5 • I DS(on D25 Pulse test, t 300 s, duty cycle d © 2001 IXYS All rights reserved IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Maximum Ratings 1000 = 1 M 1000 1 DSS 360 -55 ... +150 150 -55 ... +150 300 TO-247 1.13/10 Nm/lb.in. TO-264 0.9/6 Nm/lb.in. ...
Page 2
... I -di/dt = 100 TO-268 Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Characteristic Values ( unless otherwise specified) J min. typ. max. ...