IXFH15N100Q

Manufacturer Part NumberIXFH15N100Q
DescriptionMOSFET N-CH 1000V 15A TO-247
ManufacturerIXYS
SeriesHiPerFET™
IXFH15N100Q datasheet
 


Specifications of IXFH15N100Q

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs700 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)1000V (1kV)
Current - Continuous Drain (id) @ 25° C15AVgs(th) (max) @ Id5V @ 4mA
Gate Charge (qg) @ Vgs170nC @ 10VInput Capacitance (ciss) @ Vds4500pF @ 25V
Power - Max360WMounting TypeThrough Hole
Package / CaseTO-247ADConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.7 Ohms
Drain-source Breakdown Voltage1000 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current15 APower Dissipation360 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CVdss, Max, (v)1000
Id(cont), Tc=25°c, (a)15Rds(on), Max, Tj=25°c, (?)0.70
Ciss, Typ, (pf)4500Qg, Typ, (nc)130
Trr, Typ, (ns)-Trr, Max, (ns)250
Pd, (w)357Rthjc, Max, (ºc/w)0.35
Package StyleTO-247Lead Free Status / RoHS StatusLead free / RoHS Compliant
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HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
, High dv/dt
g
Preliminary data sheet
Symbol
Test Conditions
V
T
= 25 C to 150 C
DSS
J
V
T
= 25 C to 150 C; R
DGR
J
V
Continuous
GS
V
Transient
GSM
I
T
= 25 C
D25
C
I
T
= 25 C, pulse width limited by T
DM
C
I
T
= 25 C
AR
C
E
T
= 25 C
AR
C
E
T
= 25 C
AS
C
dv/dt
I
I
, di/dt 100 A/ s, V
S
DM
T
150 C, R
= 2
J
G
P
T
= 25 C
D
C
T
J
T
JM
T
stg
T
1.6 mm (0.063 in) from case for 10 s
L
M
Mounting torque
d
Weight
Symbol
Test Conditions
V
V
= 0 V, I
= 250 A
DSS
GS
D
V
V
= V
, I
= 4 mA
GS(th)
DS
GS
D
I
V
= 20 V
, V
= 0
GSS
GS
DC
DS
I
V
= V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10 V, I
= 0.5 • I
DS(on)
GS
D
D25
Pulse test, t
300 s, duty cycle d
© 2001 IXYS All rights reserved
IXFH 15N100Q
IXFK 15N100Q
IXFT 15N100Q
Maximum Ratings
1000
= 1 M
1000
GS
20
30
15
60
JM
15
45
1.5
V
,
5
DD
DSS
360
-55 ... +150
150
-55 ... +150
300
TO-247
1.13/10 Nm/lb.in.
TO-264
0.9/6 Nm/lb.in.
TO-247
6
TO-268
4
TO-264
10
Characteristic Values
(T
= 25 C, unless otherwise specified)
J
min.
typ.
max.
1000
3.0
200
T
= 25 C
J
T
= 125 C
J
2 %
V
=
DSS
I
=
D25
R
=
DS(on)
t
250 ns
rr
TO-247 AD (IXFH)
V
V
TO-268 (D3) ( IXFT)
V
V
A
G
A
A
S
mJ
J
TO-264 AA (IXFK)
V/ns
W
G
C
D
S
C
C
G = Gate
S = Source
TAB = Drain
C
g
g
Features
g
IXYS advanced low Q
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
low Q
Low R
g
DS (on)
Avalanche energy and current rated
V
Fast intrinsic rectifier
5.0
V
Advantages
nA
Easy to mount
50
A
2
mA
Space savings
High power density
0.7
1000 V
15 A
0.7
(TAB)
D (TAB)
process
g
98627A (9/01)

IXFH15N100Q Summary of contents

  • Page 1

    ... GSS DSS DS DSS 0.5 • I DS(on D25 Pulse test, t 300 s, duty cycle d © 2001 IXYS All rights reserved IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Maximum Ratings 1000 = 1 M 1000 1 DSS 360 -55 ... +150 150 -55 ... +150 300 TO-247 1.13/10 Nm/lb.in. TO-264 0.9/6 Nm/lb.in. ...

  • Page 2

    ... I -di/dt = 100 TO-268 Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Characteristic Values ( unless otherwise specified) J min. typ. max. ...