IXTH14N100

Manufacturer Part NumberIXTH14N100
DescriptionMOSFET N-CH 1000V 14A TO-247
ManufacturerIXYS
SeriesMegaMOS™
IXTH14N100 datasheet
 


Specifications of IXTH14N100

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs820 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)1000V (1kV)
Current - Continuous Drain (id) @ 25° C14AVgs(th) (max) @ Id4.5V @ 250µA
Gate Charge (qg) @ Vgs195nC @ 10VInput Capacitance (ciss) @ Vds5650pF @ 25V
Power - Max360WMounting TypeThrough Hole
Package / CaseTO-247ADConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.82 Ohms
Drain-source Breakdown Voltage1000 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current14 APower Dissipation360 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CVdss, Max, (v)1000
Id(cont), Tc=25°c, (a)14Rds(on), Max, Tj=25°c, (?)0.82
Ciss, Typ, (pf)5650Qg, Typ, (nc)195
Trr, Typ, (ns)850Pd, (w)360
Rthjc, Max, (k/w)0.35Package StyleTO-247
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
Page 1/2

Download datasheet (47Kb)Embed
Next
TM
MegaMOS
FET
N-Channel Enhancement Mode
Symbol
Test Conditions
V
T
= 25 C to 150 C
DSS
J
V
T
= 25 C to 150 C; R
DGR
J
V
Continuous
GS
V
Transient
GSM
I
T
= 25 C
D25
C
I
T
= 25 C, pulse width limited by T
DM
C
P
T
= 25 C
D
C
T
J
T
JM
T
stg
M
Mounting torque
d
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
V
V
= 0 V, I
= 3 mA
DSS
GS
D
V
V
= V
, I
= 250 A
GS(th)
DS
GS
D
I
V
= 20 V
, V
= 0
GSS
GS
DC
DS
I
V
= 0.8 • V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10 V, I
= 0.5 • I
DS(on)
GS
D
D25
Pulse test, t 300 s, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
IXTH 14N100
Maximum Ratings
1000
= 1 M
1000
GS
20
30
14
56
JM
360
-55 ... +150
150
-55 ... +150
1.13/10 Nm/lb.in.
6
300
Characteristic Values
(T
= 25 C, unless otherwise specified)
J
min.
typ.
max.
1000
2
T
= 25 C
J
T
= 125 C
J
0.70
V
= 1000 V
DSS
I
= 14 A
D25
R
= 0.82
DS(on)
TO-247 AD
V
V
V
V
A
G = Gate,
D = Drain,
A
S = Source,
TAB = Drain
W
C
C
C
g
C
Features
International standard package
l
JEDEC TO-247 AD
Low R
HDMOS
l
DS (on)
Rugged polysilicon gate cell structure
l
Fast switching times
l
Applications
Switch-mode and resonant-mode
l
power supplies
Motor controls
l
V
Uninterruptible Power Supplies (UPS)
l
DC choppers
4.5
V
l
100
nA
Advantages
500
A
3
mA
Easy to mount with 1 screw
l
(isolated mounting screw hole)
0.82
Space savings
l
High power density
l
D (TAB)
TM
process
92782E (3/98)
1 - 2

IXTH14N100 Summary of contents

  • Page 1

    ... V = 0.8 • V DSS DS DSS 0.5 • I DS(on D25 Pulse test, t 300 s, duty cycle IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXTH 14N100 Maximum Ratings 1000 = 1 M 1000 360 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. ...

  • Page 2

    ... DSS D D25 85 0.35 0.25 Characteristic Values ( unless otherwise specified) J min. typ. max 1.5 = 100 V 850 R IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 IXTH 14N100 TO-247 AD Outline Terminals Gate ...