IXTH14N100 IXYS, IXTH14N100 Datasheet
IXTH14N100
Manufacturer Part Number
IXTH14N100
Description
MOSFET N-CH 1000V 14A TO-247
Manufacturer
IXYS
Series
MegaMOS™r
Datasheet
1.IXTH14N100.pdf
(2 pages)
Specifications of IXTH14N100
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
820 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
195nC @ 10V
Input Capacitance (ciss) @ Vds
5650pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.82 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
14
Rds(on), Max, Tj=25°c, (?)
0.82
Ciss, Typ, (pf)
5650
Qg, Typ, (nc)
195
Trr, Typ, (ns)
850
Pd, (w)
360
Rthjc, Max, (k/w)
0.35
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTH14N100
Manufacturer:
IXYS
Quantity:
35 500
MegaMOS
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
DM
GSS
D25
DSS
GS
GSM
JM
stg
DSS
DGR
D
J
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
Mounting torque
Test Conditions
V
V
V
V
V
V
Pulse test, t 300 s, duty cycle d 2 %
J
J
C
C
C
GS
GS
GS
GS
DS
DS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
GS
TM
, I
D
D
DC
D
FET
= 3 mA
= 250 A
DSS
, V
= 0.5 • I
DS
= 0
D25
GS
= 1 M
T
T
J
J
(T
= 25 C
= 125 C
J
= 25 C, unless otherwise specified)
JM
IXTH 14N100
1000
min.
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
0.70
typ.
1.13/10 Nm/lb.in.
1000
1000
360
150
300
20
30
14
56
6
max.
0.82
100
500
4.5
3
mA
nA
W
V
V
V
V
A
A
V
V
g
C
C
C
C
A
V
I
R
TO-247 AD
G = Gate,
S = Source,
Features
l
l
l
l
Applications
l
l
l
l
Advantages
l
l
l
D25
International standard package
JEDEC TO-247 AD
Low R
Rugged polysilicon gate cell structure
Fast switching times
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
DSS
DS(on)
DS (on)
HDMOS
= 1000 V
= 14 A
= 0.82
D = Drain,
TAB = Drain
TM
process
92782E (3/98)
D (TAB)
1 - 2
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IXTH14N100 Summary of contents
Page 1
... V = 0.8 • V DSS DS DSS 0.5 • I DS(on D25 Pulse test, t 300 s, duty cycle IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXTH 14N100 Maximum Ratings 1000 = 1 M 1000 360 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. ...
Page 2
... DSS D D25 85 0.35 0.25 Characteristic Values ( unless otherwise specified) J min. typ. max 1.5 = 100 V 850 R IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 IXTH 14N100 TO-247 AD Outline Terminals Gate ...