IXFH15N80 IXYS, IXFH15N80 Datasheet
IXFH15N80
Manufacturer Part Number
IXFH15N80
Description
MOSFET N-CH 800V 15A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH14N80.pdf
(4 pages)
Specifications of IXFH15N80
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
4870pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.6 Ohms
Forward Transconductance Gfs (max / Min)
14 s
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
15
Rds(on), Max, Tj=25°c, (?)
0.6
Ciss, Typ, (pf)
3965
Qg, Typ, (nc)
150
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH15N80
Manufacturer:
APT
Quantity:
3 400
Company:
Part Number:
IXFH15N80
Manufacturer:
IXYS
Quantity:
6 000
Company:
Part Number:
IXFH15N80Q
Manufacturer:
IXYS
Quantity:
1 490
Company:
Part Number:
IXFH15N80Q
Manufacturer:
IXYS
Quantity:
6 000
HiPerFET
N-Channel Enhancement Mode
High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
© 2002 IXYS All rights reserved
DM
AR
D25
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
D
GS(th)
DSS
DSS
DS(on)
d
J
= 25 C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
V
V
Pulse test, t
S
V
J
J
C
C
C
C
J
C
GS
GS
GS
DSS
GS(th)
DS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
TM
temperature coefficient
I
150 C, R
temperature coefficient
DM
rr
, di/dt 100 A/ s, V
GS
, HDMOS
DSS
Power MOSFETs
, I
D
D
DC
D
= 3 mA
= 4 mA
, V
= 0.5 I
300 s, duty cycle d
G
= 2
DS
= 0
D25
TM
GS
Family
= 1 M
DD
T
T
J
J
V
= 125 C
= 25 C
DSS
14N80
15N80
,
JM
2 %
800
Min. Typ.
2.5
14N80
15N80
14N80
15N80
14N80
15N80
Characteristic Values
-55 ... +150
-55 ... +150
-0.214
0.096
Maximum Ratings
IXFH14N80
IXFH15N80
1.13/10 Nm/lb.in.
800
800
300
150
300
20
30
14
15
56
60
14
15
30
5
6
0.70
0.60
100
Max.
4.5
25
1
V/ns
%/K
%/K
mA
mJ
nA
W
V
C
C
C
C
A
V
V
V
V
A
A
A
A
A
A
g
V
TO-247 AD
G = Gate
S = Source
Features
•
•
•
•
•
•
Applications
•
•
•
•
•
•
•
•
Advantages
•
•
•
800 V 14 A 0.70
800 V 15 A 0.60
t
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
V
rr
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
DSS
DS (on)
250 ns
HDMOS
I
D = Drain
TAB = Drain
D25
TM
DS96523D(12/02)
process
R
(TAB)
DS(on)
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IXFH15N80 Summary of contents
Page 1
... GS(th GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d © 2002 IXYS All rights reserved IXFH14N80 Family IXFH15N80 Maximum Ratings 800 = 1 M 800 14N80 14 15N80 15 14N80 56 JM 15N80 60 14N80 14 15N80 DSS 300 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. ...
Page 2
... -di/dt = 100 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J Min. Typ. Max. , pulse test 8 14 3965 4870 315 395 73 ...
Page 3
... I DS(on) 2 10V 2 125 C J 2.2 2.0 1.8 1.6 1 1.2 1.0 0 Amperes D Figure 5. Drain Current vs. Case Temperature 20 16 IXFH15N80 12 IXFH14N80 -50 - Degrees C C © 2002 IXYS All rights reserved O C Figure 2. Output Characteristics at 125 Figure 4. R value vs. I D25 D 2.6 2.4 2 ...
Page 4
... D=0.2 D=0.1 D=0.05 D=0.02 0.01 Single pulse D=0.01 0.001 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 5000 2500 1000 500 250 100 50 200 250 O ...