IXFT14N100 IXYS, IXFT14N100 Datasheet

no-image

IXFT14N100

Manufacturer Part Number
IXFT14N100
Description
MOSFET N-CH 1000V 14A TO-268
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFT14N100

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
220nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
360W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.75 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
14
Rds(on), Max, Tj=25°c, (?)
0.75
Ciss, Typ, (pf)
4500
Qg, Typ, (nc)
220
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
357
Rthjc, Max, (ºc/w)
0.35
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
Preliminary data sheet
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
V
V
I
I
R
DM
AR
D25
GSS
DSS
L
J
JM
stg
DSS
DGR
GS
GSM
AR
D
DSS
GS(th)
d
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
V
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
DM
TM
, di/dt £ 100 A/ms, V
rr
GS
, HDMOS
, I
D
D
DC
D
= 1 mA
DSS
= 4 mA
, V
G
= 0.5 • I
= 2 W
DS
= 0
D25
TM
GS
= 1 MW
Family
DD
T
T
J
J
£ V
= 25°C
= 125°C
(T
14N100
15N100
DSS
IXFH/IXFT/IXFX14 N100 1000 V
IXFH/IXFT/IXFX15 N100 1000 V
J
= 25°C, unless otherwise specified)
JM
,
14N100
15N100
14N100
15N100
14N100
15N100
1000
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10
typ.
1000
1000
±20
±30
360
150
300
6
14
15
56
60
14
15
45
5
max.
±100
0.75
0.70
250
Nm/lb.in.
4.5
1
V/ns
mJ
mA
g
°C
°C
°C
°C
nA
mA
W
W
W
V
V
V
V
V
V
A
A
A
A
A
A
TO-247 AD
(IXFH)
TO-268 (D3)
(IXFT)
Features
Applications
Advantages
PLUS 247
(IXFX)
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
AC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) or
mounting clip or spring (PLUS 247
High power surface mountable package
High power density
t
rr
V
£ 200 ns
DSS
DS (on)
G
TM
D
HDMOS
G
14 A 0.75 W
15 A 0.70 W
I
D25
S
TM
process
97535B (1/99)
R
DS(on)
TM
(TAB)
(TAB)
(TAB)
1 - 4
)

Related parts for IXFT14N100

IXFT14N100 Summary of contents

Page 1

... DSS 0.5 • I DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH/IXFT/IXFX14 N100 1000 V IXFH/IXFT/IXFX15 N100 1000 V TM Family Maximum Ratings 1000 = 1 MW 1000 GS ±20 ± ...

Page 2

... L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFT14N100 IXFX15N100 IXFT15N100 IXFX14N100 TO-247 AD (IXFH) Outline Dim. Millimeter Min. Max 19.81 20.32 0.780 0.800 ...

Page 3

... Amperes D Fig.3 R vs. Drain Current DS(on) 20 IXF_15N100 16 12 IXF_14N100 -50 - Degrees C C Fig.5 Drain Current vs. Case Temperature © 2000 IXYS All rights reserved IXFH14N100 IXFH15N100 100 125 150 IXFT14N100 IXFX15N100 IXFT15N100 IXFX14N100 125 Volts DS Fig.2 Output characteristics at elevated temperature 2 10V GS 2.0 1 15A D 1 ...

Page 4

... Fig.10 Transient Thermal Impedance © 2000 IXYS All rights reserved IXFH14N100 IXFH15N100 5000 2500 1000 500 250 100 200 240 280 1.2 1.4 1 Pulse Width - Seconds IXFT14N100 IXFX15N100 IXFT15N100 IXFX14N100 Ciss f = 1MHz Coss Crss Volts DS Fig.8 Capacitance Curves Single pulse ...

Related keywords