IXFT14N100 IXYS, IXFT14N100 Datasheet - Page 4

• Manufacturer Part Number: IXFT14N100
• Description: MOSFET N-CH 1000V 14A TO-268
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFT14N100

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4.5V @ 4mA
• Gate Charge (qg) @ Vgs: 220nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 360W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 14
• Rds(on), Max, Tj=25°c, (?): 0.75
• Ciss, Typ, (pf): 4500
• Qg, Typ, (nc): 220
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 357
• Rthjc, Max, (ºc/w): 0.35
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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12
10
0.01
8
6
4
2
0
40
32
24
16
0.1
8
0
0
0.4
1
10
Fig.9 Source current vs Source drain voltage.
Fig.7 Gate Charge Characteristic Curve
Fig.10 Transient Thermal Impedance
-3
40
V
Vds=300V
DS
0.6
I
I
I
I
D
D
G
G
=30A
=10mA
= 500V
= 7.5A
= 10mA
80
T
Gate Charge - nC
J
= 125
0.8
120
V
O
SD
C
- Volts
1.0
160
10
T
1.2
200
J
= 25
-2
O
C
240
1.4
280
1.6
Pulse Width - Seconds
IXFH14N100
IXFH15N100
10
-1
5000
2500
1000
500
250
100
0
Fig.8
5
IXFT14N100
IXFT15N100
10
Capacitance Curves
Coss
Crss
Ciss
15
V
10
DS
0
- Volts
20
Single pulse
25
IXFX15N100
IXFX14N100
f = 1MHz
30
35
40
4 - 4
10
1