IXTK120N25 IXYS, IXTK120N25 Datasheet - Page 4
IXTK120N25
Manufacturer Part Number
IXTK120N25
Description
MOSFET N-CH 250V 120A TO-264
Manufacturer
IXYS
Series
MegaMOS™r
Datasheet
1.IXTK120N25.pdf
(5 pages)
Specifications of IXTK120N25
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
360nC @ 10V
Input Capacitance (ciss) @ Vds
7700pF @ 25V
Power - Max
730W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.02 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
730 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
120
Rds(on), Max, Tj=25°c, (?)
0.018
Ciss, Typ, (pf)
9400
Qg, Typ, (nc)
400
Trr, Typ, (ns)
350
Pd, (w)
560
Rthjc, Max, (k/w)
0.22
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTK120N25
Manufacturer:
IXYS
Quantity:
18 000
Company:
Part Number:
IXTK120N25P
Manufacturer:
IXYS
Quantity:
768
IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
200
180
160
140
120
100
200
180
160
140
120
100
100
80
60
40
20
80
60
40
20
0
0
0.4
3
0
Fig. 9. Source Current vs. Source-To-
f = 1MHz
3.5
5
T
T
J
J
0.6
Fig. 11. Capacitance
= 125ºC
= 125ºC
Fig. 7. Input Adm ittance
10
-40ºC
25ºC
4
Drain Voltage
V
15
V
0.8
V
G S
S D
4.5
D S
- Volts
- Volts
T
20
- Volts
J
= 25ºC
5
1
25
C oss
C iss
C rss
5.5
30
1.2
6
35
6.5
1.4
40
1000
100
140
120
100
10
80
60
40
20
10
1
0
9
8
7
6
5
4
3
2
1
0
1
0
0
T
R
J
T
DS
= -40ºC
C
20
125ºC
V
I
I
(on)
D
G
= 25ºC
25ºC
DS
50
Fig. 8. Transconductance
= 60A
= 10mA
Fig. 12. Forw ard Bias Safe
Limit
40
= 125V
Fig. 10. Gate Charge
100
60
Q
Operating Area
10
G
I
- nanoCoulombs
V
80
D
150
D S
- Amperes
DC
100 120 140 160 180 200
- Volts
200
IXTK 120N25
1ms
100
250
25µs
300
1000
350