IXTK120N25 IXYS, IXTK120N25 Datasheet - Page 5

• Manufacturer Part Number: IXTK120N25
• Description: MOSFET N-CH 250V 120A TO-264
• Manufacturer: IXYS
• Series: MegaMOS™r

Specifications of IXTK120N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 360nC @ 10V
• Input Capacitance (ciss) @ Vds: 7700pF @ 25V
• Power - Max: 730W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 730 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 120
• Rds(on), Max, Tj=25°c, (?): 0.018
• Ciss, Typ, (pf): 9400
• Qg, Typ, (nc): 400
• Trr, Typ, (ns): 350
• Pd, (w): 560
• Rthjc, Max, (k/w): 0.22
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTK 120N25
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
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Puls e W idth - millis ec onds
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