MOSFET N-CH 200V 170A TO-264

 

IXFK170N20P

Manufacturer Part NumberIXFK170N20P
DescriptionMOSFET N-CH 200V 170A TO-264
ManufacturerIXYS
SeriesPolar™
IXFK170N20P datasheets

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Specifications of IXFK170N20P

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs14 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)200V
Current - Continuous Drain (id) @ 25° C170AVgs(th) (max) @ Id5V @ 1mA
Gate Charge (qg) @ Vgs185nC @ 10VInput Capacitance (ciss) @ Vds11400pF @ 25V
Power - Max1250WMounting TypeThrough Hole
Package / CaseTO-264Vdss, Max, (v)200
Id(cont), Tc=25°c, (a)170Rds(on), Max, Tj=25°c, (?)0.014
Ciss, Typ, (pf)11.4Qg, Typ, (nc)185
Trr, Typ, (ns)-Trr, Max, (ns)200
Pd, (w)1250Rthjc, Max, (ºc/w)0.12
Package StyleTO-264Lead Free Status / RoHS StatusLead free / RoHS Compliant
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Polar
Power MOSFET
TM
HiperFET
TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
V
T
= 25°C to 175°C
DSS
J
V
T
= 25°C to 175°C, R
DGR
J
V
Continuous
GSS
V
Transient
GSM
I
T
= 25°C
D25
C
I
Leads Current Limit, RMS
LRMS
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
A
C
E
T
= 25°C
AS
C
≤ I
≤ V
dV/dt
I
, V
, T
S
DM
DD
DSS
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6mm (0.062 in.) from case for 10s
L
T
Plastic body for 10s
SOLD
M
Mounting force
(PLUS247)
d
Mounting torque
(TO-264)
Weight
PLUS247
TO-264
Symbol
Test Conditions
(T
= 25°C, unless otherwise specified)
J
BV
V
= 0V, I
= 3mA
DSS
GS
D
V
V
= V
, I
= 1mA
GS(th)
DS
GS
D
= ±20V, V
I
V
= 0V
GSS
GS
DS
I
V
= V
DSS
DS
DSS
V
= 0V
GS
R
V
= 10V, I
= 0.5 • I
DS(on)
GS
D
D25
© 2008 IXYS CORPORATION, All rights reserved
Preliminary Technical Information
IXFK170N20P
IXFX170N20P
Maximum Ratings
200
= 1MΩ
200
GS
±20
±30
170
75
400
JM
85
4
≤ 175°C
20
J
1250
-55 ... +175
175
-55 ... +175
300
260
20..120/4.5..27
1.13/10
6
10
Characteristic Values
Min.
Typ.
200
3.0
T
= 150°C
J
, Note 1
V
=
200V
DSS
I
=
170A
D25
≤ ≤ ≤ ≤ ≤
14mΩ Ω Ω Ω Ω
R
DS(on)
TO-264 (IXFK)
G
D
S
V
V
PLUS247 (IXFX)
V
V
A
A
A
A
G = Gate
D
J
S = Source
TAB = Drain
V/ns
W
Features
°C
• Fast intrinsic diode
°C
• Avalanche Rated
°C
• Low R
and Q
°C
DS(ON)
• Low package inductance
°C
N/lb.
Advantages
Nm/lb.in.
• Low gate charge results in simple
g
drive requirement
g
• High power density
Applications
• DC-DC coverters
• Battery chargers
• Switched-mode and resonant-mode
Max.
power supplies
V
• DC choppers
• AC and DC motor control
5.0
V
• Uninterrupted power supplies
±200 nA
• High speed power switching
applications
50 μA
1 mA
14 mΩ
(TAB)
(TAB)
= Drain
G
DS100008(7/08)

IXFK170N20P Summary of contents

  • Page 1

    ... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXFK170N20P IXFX170N20P Maximum Ratings 200 = 1MΩ 200 GS ±20 ±30 170 75 400 ≤ 175° 1250 -55 ... +175 175 -55 ... +175 300 260 20..120/4.5..27 1.13/10 ...

  • Page 2

    ... I = 0.5 • DSS D D25 60 0.15 Characteristic Values Min. Typ. JM 1.6 20 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFK170N20P IXFX170N20P TO-264 (IXFK) Outline Max 0.12 °C/W °C/W Max. 170 A 510 A PLUS 247 (IXFX) Outline TM 1.3 V 200 ns μ ...

  • Page 3

    ... Normalized to I DS(on) vs. Junction Temperature 3 10V GS 3.0 2.6 I 2.2 D 1.8 1.4 1.0 0.6 0.2 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 90 External Lead Current Limit -50 - Degrees Centigrade C IXFK170N20P IXFX170N20P 85A Value D = 170A I = 85A D 100 125 150 175 100 125 150 175 ...

  • Page 4

    ... T = 25º 1.0 1.1 1.2 1.3 1.4 1.5 1,000.0 C iss 100.0 C oss 10.0 1.0 C rss 0 IXFK170N20P IXFX170N20P Fig. 8. Transconductance 40º 100 120 I - Amperes D Fig. 10. Gate Charge V = 100V 85A 10mA 100 120 Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R ...

  • Page 5

    ... IXYS CORPORATION, All rights reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXFK170N20P IXFX170N20P 0.1 1 IXYS REF: T_170N20P(93)7-16-08 10 ...