Polar
Power MOSFET
TM
HiperFET
TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
V
T
= 25°C to 175°C
DSS
J
V
T
= 25°C to 175°C, R
DGR
J
V
Continuous
GSS
V
Transient
GSM
I
T
= 25°C
D25
C
I
Leads Current Limit, RMS
LRMS
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
A
C
E
T
= 25°C
AS
C
≤ I
≤ V
dV/dt
I
, V
, T
S
DM
DD
DSS
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6mm (0.062 in.) from case for 10s
L
T
Plastic body for 10s
SOLD
M
Mounting force
(PLUS247)
d
Mounting torque
(TO-264)
Weight
PLUS247
TO-264
Symbol
Test Conditions
(T
= 25°C, unless otherwise specified)
J
BV
V
= 0V, I
= 3mA
DSS
GS
D
V
V
= V
, I
= 1mA
GS(th)
DS
GS
D
= ±20V, V
I
V
= 0V
GSS
GS
DS
I
V
= V
DSS
DS
DSS
V
= 0V
GS
R
V
= 10V, I
= 0.5 • I
DS(on)
GS
D
D25
© 2008 IXYS CORPORATION, All rights reserved
Preliminary Technical Information
IXFK170N20P
IXFX170N20P
Maximum Ratings
200
= 1MΩ
200
GS
±20
±30
170
75
400
JM
85
4
≤ 175°C
20
J
1250
-55 ... +175
175
-55 ... +175
300
260
20..120/4.5..27
1.13/10
6
10
Characteristic Values
Min.
Typ.
200
3.0
T
= 150°C
J
, Note 1
V
=
200V
DSS
I
=
170A
D25
≤ ≤ ≤ ≤ ≤
14mΩ Ω Ω Ω Ω
R
DS(on)
TO-264 (IXFK)
G
D
S
V
V
PLUS247 (IXFX)
V
V
A
A
A
A
G = Gate
D
J
S = Source
TAB = Drain
V/ns
W
Features
°C
• Fast intrinsic diode
°C
• Avalanche Rated
°C
• Low R
and Q
°C
DS(ON)
• Low package inductance
°C
N/lb.
Advantages
Nm/lb.in.
• Low gate charge results in simple
g
drive requirement
g
• High power density
Applications
• DC-DC coverters
• Battery chargers
• Switched-mode and resonant-mode
Max.
power supplies
V
• DC choppers
• AC and DC motor control
5.0
V
• Uninterrupted power supplies
±200 nA
• High speed power switching
applications
50 μA
1 mA
14 mΩ
(TAB)
(TAB)
= Drain
G
DS100008(7/08)