IXFK32N100P IXYS, IXFK32N100P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFK32N100P
Manufacturer Part Number
IXFK32N100P
Description
MOSFET N-CH 1000V 32A TO-264
Specifications of IXFK32N100P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
320 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
225nC @ 10V
Input Capacitance (ciss) @ Vds
14200pF @ 25V
Power - Max
960W
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.32 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
32 A
Power Dissipation
960 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
32
Rds(on), Max, Tj=25°c, (?)
0.32
Ciss, Typ, (pf)
14200
Qg, Typ, (nc)
225
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
960
Rthjc, Max, (ºc/w)
0.130
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Polar
HiPerFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION,All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
TM
Power MOSFET
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque
Mounting force
TO-264
TO-247
V
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
= 0V, I
= V
= ± 30V, V
= V
= 0V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
D
D
= 3mA
≤ V
= 1mA
= 0.5 • I
DS
DSS
= 0V
, T
(IXFK)
(IXFX)
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXFK32N100P
IXFX32N100P
20..120/4.5..27
1000
Characteristic Values
Min.
3.5
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10
1000
1000
± 30
± 40
Typ.
960
150
300
260
1.5
32
75
16
10
10
6
± 200
Max.
320 mΩ
Nm/lb.in.
2.5 mA
6.5
50
Nm/lb.
V/ns
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
t
TO-264 (IXFK)
PLUS247 (IXFX)
G = Gate
S = Source
Features
Advantages
Applications:
D25
rr
Fast intrinsic diode
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Switched-mode and resonant mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor controls
Robotics and servo controls
Easy to mount
Space savings
High power density
DS(on)
DSS
G
D
S
= 1000V
= 32A
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
D = Drain
TAB = Drain
320mΩ Ω Ω Ω Ω
300ns
(TAB)
(TAB)
DS99777C(4/08)
Related parts for IXFK32N100P
IXFK32N100P Summary of contents
... GS(th ± 30V GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2008 IXYS CORPORATION,All rights reserved IXFK32N100P IXFX32N100P Maximum Ratings 1000 = 1MΩ 1000 GS ± 30 ± 1.5 ≤ 150° 960 -55 ... +150 150 -55 ... +150 300 260 1.13/10 20..120/4.5.. Characteristic Values Min. ...
... D 20.80 E 15.75 e 5.45 BSC L 19.81 L1 3.81 Q 5.59 R 4.32 6,404,065 B1 6,683,344 6,727,585 6,534,343 6,710,405 B2 6,759,692 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXFK32N100P IXFX32N100P Inches Max. Min. Max. 5.13 .190 .202 2.89 .100 .114 2.10 .079 .083 1.42 .044 .056 2.69 .094 .106 3.09 .114 ...
... Fig. 2. Extended Output Characteristics @ 25º 15V GS 10V Volts DS Fig Normalized to I DS(on) D vs. Junction Temperature V = 10V 32A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXFK32N100P IXFX32N100P 16A Value I = 16A D 100 125 150 100 125 150 ...
... C oss 0.010 C rss 0.001 Fig. 8. Transconductance 40ºC J 25ºC 125º Amperes D Fig. 10. Gate Charge V = 500V 16A 10mA 100 150 200 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXFK32N100P IXFX32N100P 250 300 0 IXYS REF: F_32N100P(96)3-28-08-C ...
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