IXTK110N30 IXYS, IXTK110N30 Datasheet
IXTK110N30
Specifications of IXTK110N30
Related parts for IXTK110N30
IXTK110N30 Summary of contents
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... ± GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 ms, duty cycle d 2% © 2003 IXYS All rights reserved Advance Technical Information IXTK 110N30 Maximum ratings 300 = 1.0 M 300 ±20 ±30 110 75 440 4 DSS 730 -55 ... +150 150 -55 ... +150 300 0.7/6 ...
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... S GS Pulse test, t 300 µs, duty cycle 25A, -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic values Min. Typ. Max. 85 101 7800 1700 ...
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... V - Volts DS Fig Normalized to I DS(on) Junction Temperature 2 0.5 -50 - Degrees Centigrade J Fig. 5. Drain Current vs. Case T emperature -50 - Degrees Centigrade C © 2003 IXYS All rights reserved Value vs. D25 I = 55A IXTK 110N30 Fig. 2. Output Characteristics @ 125 Deg 4 Volts DS Fig Normalized to I DS(on) Value vs. I ...
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... Q - nanoCoulombs G Fig. 11. Maximum Transient Thermal Resistance 1 0.1 0. Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 0000 1 000 240 320 400 000 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 ...