IXFX38N80Q2 IXYS, IXFX38N80Q2 Datasheet

MOSFET N-CH 800V 38A PLUS247

IXFX38N80Q2

Manufacturer Part Number
IXFX38N80Q2
Description
MOSFET N-CH 800V 38A PLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFX38N80Q2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
220 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
38A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
8340pF @ 25V
Power - Max
735W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.22 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
38 A
Power Dissipation
735 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
38
Rds(on), Max, Tj=25°c, (?)
0.22
Ciss, Typ, (pf)
9500
Qg, Typ, (nc)
190
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
735
Rthjc, Max, (ºc/w)
0.17
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFX38N80Q2
Manufacturer:
IXYS
Quantity:
35 500
HiPerFET
Power MOSFETs
Q2-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
Low intrinsic R
© 2004 IXYS All rights reserved
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
F
Weight
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
JM
L
J
stg
C
DSS
DGR
GS
GSM
AR
AS
D
ISOL
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6mm (0.063in) from case for 10s (Plus247, TO-264) 300
50/60Hz, RMS t =1 min
I
Mounting torque
Terminal torque
Mounting force
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
ISOL
S
C
C
C
C
C
C
J
J
J
GS
GS
GS
GS
DS
DS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
< 1mA t = 1s
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
g
DM
TM
GS
, di/dt ≤ 100 A/µs, V
DSS
, I
D
D
DC
D
= 3mA
= 8 mA
, V
= 0.5 • I
G
= 2 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
T
(T
J
J
≤ V
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
DSS
g
IXFK 38N80Q2
IXFN 38N80Q2
IXFX 38N80Q2
TO-264
SOT-227B
PLUS-247 22...130/5...30
PLUS247
TO-264
SOT-227B
SOT-227B
JM
,
min.
800
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/ib.in.
2500
3000
0.9/8 Nm/lb.in.
150
800
800
±30
±40
150
735
4.0
38
38
75
20
10
30
g
max.
±200
220 mΩ
4.5
50
2 mA
N/lb
V/ns
mJ
V~
V~
nA
µA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
t
PLUS 247
TO-264 AA (IXFK)
miniBLOC, SOT-227 B (IXFN)
* Either Source terminal can be used as
G = Gate
S = Source
Features
Advantages
D25
rr
main or Kelvin source terminal
Double metal process for low gate
International standard packages
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
resistance
Easy to mount
Space savings
High power density
Epoxy meet UL 94 V-0, flammability
miniBLOC package version with
DSS
Aluminum Nitrate isolation
DS(on)
≤ ≤ ≤ ≤ ≤ 250 ns
E153432
G
TM
D
(IXFX)
G
=
=
=
D
S
G
D = Drain
TAB = Drain
800 V
220 mΩ Ω Ω Ω Ω
DS99150A(09/04)
38 A
S*
D (TAB)
D
D (TAB)
S*

Related parts for IXFX38N80Q2

IXFX38N80Q2 Summary of contents

Page 1

... GSS DSS DS DSS 0.5 • I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2004 IXYS All rights reserved IXFK 38N80Q2 IXFN 38N80Q2 IXFX 38N80Q2 g Maximum Ratings 800 = 1 MΩ 800 GS ±30 ±40 38 150 4.0 ≤ DSS 735 -55 ...

Page 2

... I = 25A, -di/dt = 100 A/µ SOT-227B miniBLOC Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 IXFK 38N80Q2 Characteristic Values (T = 25°C, unless otherwise specified) J min ...

Page 3

... Volts D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 2.8 2 10V GS 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2004 IXYS All rights reserved IXFK 38N80Q2 º 5. º C 3.1 2 2.5 5.5V 2.2 1.9 5V 1.6 1.3 0.7 0 125ºC ...

Page 4

... T = 125º 0.4 0.5 0.6 0.7 0 Volts S D Fig. 11. Capacitance 10000 1000 f = 1MHz 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXFK 38N80Q2 5 25ºC J 0.9 1 1.1 1.2 1.3 1000 C iss 100 C oss 10 C rss 25 30 ...

Page 5

... © 2004 IXYS All rights reserved IXFK 38N80Q2 illis IXFN 38N80Q2 IXFX 38N80Q2 ...

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