STW77N65M5 STMicroelectronics, STW77N65M5 Datasheet

MOSFET N-CH 650V 69A TO-247

STW77N65M5

Manufacturer Part Number
STW77N65M5
Description
MOSFET N-CH 650V 69A TO-247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheets

Specifications of STW77N65M5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
38 mOhm @ 34.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
69A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
9800pF @ 100V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.03 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
69 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Gate Charge Qg
200 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10589-5
STW77N65M5

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
STW77N65M5
Manufacturer:
FSC
Quantity:
3 000
Part Number:
STW77N65M5
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STW77N65M5
Quantity:
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Part Number:
STW77N65M5 77N65M5
Manufacturer:
ST
0
Part Number:
STW77N65M5,77N65M5,
Manufacturer:
ST
0
Features
Application
Switching applications
Description
This device is a N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1.
February 2011
STW77N65M5
Higher V
Higher dv/dt capability
Excellent switching performance
Easy to drive
100% avalanche tested
Order code
STW77N65M5
N-channel 650 V, 0.033 Ω , 69 A, MDmesh™ V Power MOSFET
Order code
DSS
Device summary
rating
@T
710 V
V
DSS
jmax.
R
DS(on)
< 0.038 Ω
77N65M5
Marking
max.
Doc ID 15322 Rev 3
69 A
I
D
Figure 1.
Package
TO-247
Internal schematic diagram
STW77N65M5
TO-247
1
Packaging
2
Tube
3
TO-247
www.st.com
1/14
14

Related parts for STW77N65M5

STW77N65M5 Summary of contents

Page 1

... Table 1. Device summary Order code STW77N65M5 February 2011 max. I DS(on) D < 0.038 Ω Figure 1. Marking 77N65M5 Doc ID 15322 Rev 3 STW77N65M5 TO-247 Internal schematic diagram Package Packaging TO-247 Tube TO-247 1/14 www.st.com 14 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/ Doc ID 15322 Rev 3 STW77N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STW77N65M5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Max current during repetitive or single pulse avalanche I AR (pulse width limited by T Single pulse avalanche energy ...

Page 4

... D Parameter Test conditions V = 100 MHz 520 520 MHz open drain V = 520 (see Figure 16) Doc ID 15322 Rev 3 STW77N65M5 Min. Typ 650 =125 ° 250 µ 34.5 A 0.033 Min. Typ. 9800 - 200 6 - 590 - 194 - 1.2 = 34.5 A, 185 - 45 65 while V is rising from 0 oss ...

Page 5

... STW77N65M5 Table 6. Switching times Symbol t Voltage delay time d(V) t Voltage rise time r(V) t Current fall time f(i) t Crossing time c(off) Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... DS Figure 5. AM04965v1 140 7V 120 100 (V) DS AM04969v1 R DS(on 0.035 500 0.030 400 0.025 300 0.020 200 0.015 100 0 200 Q (nC) g Doc ID 15322 Rev 3 STW77N65M5 Thermal impedance Transfer characteristics I D (A) V =25V Static drain-source on resistance (Ω) V =10V GS 0. AM04966v1 10 V (V) GS AM04968v1 ...

Page 7

... STW77N65M5 Figure 8. Capacitance variations C (pF) 100000 10000 1000 100 Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -50 - Figure 12. Source-drain diode forward characteristics V SD (V) T =-50°C J 1.2 1.0 0.8 0.6 T =150°C J 0.4 0 Figure 9. AM04970v1 E oss (µ ...

Page 8

... Electrical characteristics Figure 14. Switching losses vs gate resistance (1) E (µJ) V =400V DD 1600 V =10V GS T =25°C J 1400 I =40A D 1200 1000 800 600 400 200 Eon including reverse recovery of a SiC diode 8/14 AM04973v1 Eoff Eon (Ω) G Doc ID 15322 Rev 3 STW77N65M5 ...

Page 9

... STW77N65M5 3 Test circuits Figure 15. Switching times test circuit for resistive load D.U. Figure 17. Test circuit for inductive load switching and diode recovery times FAST L=100µH G D.U.T. DIODE Ω Figure 19. Unclamped inductive waveform Figure 16. Gate charge test circuit 3.3 2200 µF µ ...

Page 10

... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/14 Doc ID 15322 Rev 3 STW77N65M5 ® ...

Page 11

... STW77N65M5 Table 8. TO-247 mechanical data Dim ∅P ∅ Min. Typ. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID 15322 Rev 3 Package mechanical data Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14.80 4 ...

Page 12

... Package mechanical data Figure 21. TO-247 drawing 12/14 Doc ID 15322 Rev 3 STW77N65M5 0075325_F ...

Page 13

... STW77N65M5 5 Revision history Table 9. Document revision history Date 20-Jan-2009 14-Jul-2009 03-Feb-2011 Revision 1 First release. 2 Document status promoted from preliminary data to datasheet. 3 Section 2.1: Electrical characteristics (curves) Doc ID 15322 Rev 3 Revision history Changes has been updated. 13/14 ...

Page 14

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 15322 Rev 3 STW77N65M5 ...

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