IXFK35N50 IXYS, IXFK35N50 Datasheet
IXFK35N50
Manufacturer Part Number
IXFK35N50
Description
MOSFET N-CH 500V 35A TO-264AA
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFK33N50.pdf
(2 pages)
Specifications of IXFK35N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
150 mOhm @ 16.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
227nC @ 10V
Input Capacitance (ciss) @ Vds
5700pF @ 25V
Power - Max
416W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.15 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
35 A
Power Dissipation
416 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
35
Rds(on), Max, Tj=25°c, (?)
0.15
Ciss, Typ, (pf)
5200
Qg, Typ, (nc)
227
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
416
Rthjc, Max, (ºc/w)
0.30
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFK35N50
Manufacturer:
IXYS
Quantity:
4 500
Company:
Part Number:
IXFK35N50
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXFK35N50
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol
V
V
I
I
R
Preliminary data
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
IXYS reserves the right to change limits, test conditions, and dimensions.
GSS
DSS
DM
AR
D25
DSS
GS(th)
J
JM
stg
L
DS(on)
DSS
DGR
GS
GSM
AS
AR
D
d
Test Conditions
V
V
V
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Test Conditions
T
T
Continuous
Transient
T
T
pulse width limited by T
T
I
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
D
S
DSS
DS
GS(th)
DS
C
C
C
C
J
C
GS
GS
GS
GS
J
J
£ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C,
= 25°C
= 32 A
= 25°C
£ I
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
temperature coefficient
DM
temperature coefficient
TM
GS
, di/dt £ 100 A/ms, V
, I
D
D
DC
D
= 1 mA
DSS
= 4 mA
G
, V
= 16.5A
= 2 W
DS
= 0
GS
JM
= 1 MW
DD
T
T
33N50
35N50
£ V
J
J
(T
= 125°C
= 25°C
33N50
35N50
33N50
35N50
33N50
35N50
rr
J
DSS
= 25°C, unless otherwise specified)
,
min.
500
2
Characteristic Values
-55 ... +150
-55 ... +150
-0.206
0.102
0.9/6
416
150
300
typ.
Maximum Ratings
500
500
±20
±30
132
140
10
2.5
45
33
35
30
35
5
IXFK33N50
IXFK35N50
±200
max.
0.16
0.15
200
Nm/lb.in.
4
2
V/ns
%/K
%/K
mA
°C
°C
°C
°C
W
mJ
nA
mA
g
W
W
V
V
V
V
V
V
A
A
A
A
A
A
J
Features
·
·
·
·
·
Applications
·
·
·
·
·
·
Advantages
·
·
·
TO-264 AA
G = Gate
S = Source
International standard packages
Molding epoxies meet UL 94 V-0
flammability classification
Low R
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic rectifier
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
G
t
500 V
500 V
D
rr
V
DS (on)
£ 250 ns
S
DSS
HDMOS
33 A 0.16 W
35 A 0.15 W
I
TAB = Drain
D = Drain
D25
TM
process
D (TAB)
97517D (07/00)
R
DS(on)
1 - 2
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IXFK35N50 Summary of contents
Page 1
... DS DSS 16.5A DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFK33N50 IXFK35N50 rr Maximum Ratings 500 = 1 MW 500 GS ±20 ±30 33N50 33 35N50 35 33N50 132 35N50 140 ...
Page 2
... Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 100 V 0. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFK 33N50 IXFK 35N50 TO-264 AA Outline S pF 750 pF 310 ...