IXTK90P20P IXYS, IXTK90P20P Datasheet

MOSFET P-CH 200V 90A TO-264

IXTK90P20P

Manufacturer Part Number
IXTK90P20P
Description
MOSFET P-CH 200V 90A TO-264
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTK90P20P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
44 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
205nC @ 10V
Input Capacitance (ciss) @ Vds
12000pF @ 25V
Power - Max
890W
Mounting Type
Through Hole
Package / Case
TO-264
Vdss, Max, (v)
-200.0
Id(cont), Tc=25°c, (a)
-90.0
Rds(on), Max, Tj=25°c, (?)
0.044
Ciss, Typ, (pf)
12000
Qg, Typ, (nc)
205
Trr, Typ, (ns)
315
Pd, (w)
890
Rthjc, Max, (k/w)
0.14
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTK90P20P
Manufacturer:
ABRACON
Quantity:
35 000
PolarP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
Mounting Torque
PLUS247
TO-264
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= -10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
= - 250µA
D
≤ V
= -1mA
GS
DS
= 0.5 • I
= 0V
DSS
= 0V
, T
(PLUS247)
(TO-264)
J
D25
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
I
IXTX90P20P
XTK90P20P
20..120 / 4.5..27
- 200
- 2.0
Min.
-55 ... +150
-55 ... +150
Characteristic Values
Maximum Ratings
1.13 / 10
- 200
- 200
- 270
- 90
- 90
±20
±30
890
150
300
260
3.5
10
10
Typ.
6
- 250 µA
±100 nA
- 4.0
Nm/lb.in.
- 50 µA
Max.
44 mΩ
N/lb.
V/ns
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
V
g
g
J
V
I
R
TO-264 (IXTK)
G = Gate
S = Source
Features
Advantages
Applications
PLUS247 (IXTX)
D25
International Standard Packages
Rugged PolarP
Avalanche Rated
Fast Intrinsic Diode
Low Package Inductance
Easy to Mount
Space Savings
High Power Density
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
DS(on)
DSS
G
≤ ≤ ≤ ≤ ≤
=
=
D
S
D
TAB = Drain
TM
- 200V
- 90A
Process
44mΩ Ω Ω Ω Ω
= Drain
DS99933B(03/09)
(TAB)
(TAB)

Related parts for IXTK90P20P

IXTK90P20P Summary of contents

Page 1

... I = -1mA GS(th ±20V GSS DSS DS DSS -10V 0.5 • I DS(on © 2009 IXYS CORPORATION, All Rights Reserved XTK90P20P I IXTX90P20P Maximum Ratings - 200 = 1MΩ - 200 GS ±20 ± 270 3.5 ≤ 150° 890 -55 ... +150 150 -55 ... +150 300 260 20..120 / 4.5..27 1. Characteristic Values Min ...

Page 2

... L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTK90P20P IXTX90P20P Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 ...

Page 3

... Junction Temperature 2 -10V 2.2 GS 2.0 1 90A D 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 -50 - Degrees Centigrade J IXTK90P20P IXTX90P20P -21 -24 -27 - 45A vs 45A D 75 100 125 150 75 100 125 150 ...

Page 4

... T = 25º -3.0 -3.5 -4.0 -4.5 - 1,000 C iss - 100 C oss - 10 C rss - 1 - -25 -30 -35 -40 10 IXTK90P20P IXTX90P20P Fig. 8. Transconductance -20 -40 -60 -80 -100 I - Amperes D Fig. 10. Gate Charge V = -100V 45A -1mA 100 120 140 Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R Limit DS(on) 25µs 100µ ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTK90P20P IXTX90P20P 0.1 1 IXYS REF: T_90P20P(B9)03-25-09-D 10 ...

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