IXFB100N50P IXYS, IXFB100N50P Datasheet
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Manufacturer Part Number
IXFB100N50P
Description
MOSFET N-CH 500V 100A PLUS264
Specifications of IXFB100N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
49 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
20000pF @ 25V
Power - Max
1250W
Mounting Type
Through Hole
Package / Case
3-PLUS264™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.049 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
100 A
Power Dissipation
1250 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
100
Rds(on), Max, Tj=25°c, (?)
0.049
Ciss, Typ, (pf)
20000
Qg, Typ, (nc)
240
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
1250
Rthjc, Max, (ºc/w)
0.1
Package Style
PLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
F
Weight
GSS
DSS
D25
DRMS
DM
AR
GS(th)
J
JM
stg
L
SOLD
C
DS(on)
© 2006 IXYS All rights reserved
DSS
DGR
GSS
GSM
AR
AS
D
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting force
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 3 mA
= 8 mA
, V
= 0.5 I
G
= 2 Ω
DS
= 0
D25
, Note 1
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
IXFB 100N50P
JM
,
30..120/7.5...2.7
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1250
500
500
±30
±40
100
250
100
100
150
300
260
75
20
10
5
±200
2000
Max.
5.0
25
49
V/ns
N/lb
m Ω
mJ
nA
µA
µA
°C
°C
°C
°C
°C
W
g
V
V
V
V
V
V
A
A
A
A
J
V
I
R
t
PLUS264
G = Gate
S = Source
Features
l
l
l
l
Advantages
l
l
l
D25
rr
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Plus 264
Space savings
High power density
DS(on)
DSS
G
D
S
TM
TM
= 500
= 100
≤ ≤ ≤ ≤ ≤ 49 mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 200 ns
(IXFB)
package for clip or spring
D = Drain
TAB = Drain
DS99496E(01/06)
V
A
(TAB)
Related parts for IXFB100N50P
IXFB100N50P Summary of contents
... GS(th ± GSS DSS DS DSS 0.5 I DS(on D25 © 2006 IXYS All rights reserved IXFB 100N50P Maximum Ratings 500 = 1 MΩ 500 GS ±30 ±40 100 75 250 JM 100 100 5 ≤ DSS 1250 -55 ... +150 150 -55 ... +150 300 260 30..120/7.5...2.7 10 Characteristic Values Min. ...
... Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min ...
... DS Fig Normalized to I DS(on) vs. Drain Current 3 2 10V GS 2.6 2.4 2.2 2 1.8 1.6 1.4 1 100 120 I - Amperes D © 2006 IXYS All rights reserved 220 = 10V 200 8V 180 160 7V 140 120 100 3.5 4 4.5 5 5.5 0 3.1 = 10V GS 8V 2.8 7V 2.5 2 ...
... T = 125º 25º 0.4 0.6 0 Volts SD Fig. 11. Capacitance 100,000 MHz 10,000 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 150 135 120 105 6 1.2 1.4 1.6 0 1,000 C iss 100 ...
... IXYS All rights reserved Fig. 13. Maximum Transient Thermal Resistance 0.01 0.1 Pulse W idth - Seconds IXFB 100N50P 1 10 ...
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