IXTK22N100L IXYS, IXTK22N100L Datasheet

MOSFET N-CH 1000V 22A TO-264

IXTK22N100L

Manufacturer Part Number
IXTK22N100L
Description
MOSFET N-CH 1000V 22A TO-264
Manufacturer
IXYS
Datasheet

Specifications of IXTK22N100L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 500mA, 20V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
270nC @ 15V
Input Capacitance (ciss) @ Vds
7050pF @ 25V
Power - Max
700W
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.6 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
700 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
22
Rds(on), Max, Tj=25°c, (?)
0.6
Ciss, Typ, (pf)
7050
Qg, Typ, (nc)
270
Trr, Typ, (ns)
1000
Pd, (w)
700
Rthjc, Max, (k/w)
0.18
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTK22N100L
Manufacturer:
IXYS
Quantity:
768
Linear
w/ Extended FBSOA
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
M
F
Weight
Symbol
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
(T
GSS
DSS
J
L
C
AS
D
JM
stg
SOLD
DSS
DGR
GSS
GSM
GS(th)
d
DS(on)
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.063 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (IXTK)
Mounting Force (IXTX)
TO-264
PLUS247
Test Conditions
V
V
V
V
V
Power MOSFET
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 20V, I
GS
DSS
, I
D
, V
D
= 1mA
D
= 250μA
GS
= 0.5 • I
DS
= 0V
= 0V
DSS
GS
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXTK22N100L
IXTX22N100L
20..120 / 4.5..27
Characteristic Values
1000
-55 ... +150
-55 ... +150
3.0
Min.
Maximum Ratings
1.13/10
1000
1000
±40
±30
700
150
300
260
1.5
Typ.
22
50
22
10
6
±200 nA
Nm/lb.in.
600 mΩ
Max.
5.5
50 μA
1 mA
N/lb.
°C
°C
W
°C
°C
°C
V
g
V
g
V
V
V
V
A
A
A
J
V
I
R
TO-264 (IXTK)
PLUS247 (IXTX)
G = Gate
S = Source
Features
Advantages
Applications
D25
Designed for Linear Operation
Avalanche Rated
Molding Epoxy Meets UL94 V-0
Flammability Classification
Easy to Mount
Space Savings
High Power Density
Programmable Loads
Current Regulators
DC-DC Converters
Battery Chargers
DC Choppers
Temperature and Lighting Controls
DS(on)
DSS
G
G
D
S
D
S
= 1000V
= 22A
≤ ≤ ≤ ≤ ≤ 600mΩ Ω Ω Ω Ω
D
Tab = Drain
= Drain
Tab
Tab
DS99293D(10/10)

Related parts for IXTK22N100L

IXTK22N100L Summary of contents

Page 1

... GSS DSS DS DSS 20V 0.5 • Note 1 DS(on DSS © 2010 IXYS CORPORATION, All Rights Reserved IXTK22N100L IXTX22N100L Maximum Ratings 1000 1000 ±30 ± 1.5 700 -55 ... +150 150 -55 ... +150 300 260 1.13/10 Nm/lb.in. 20..120 / 4.5..27 N/lb Characteristic Values Min. Typ. ...

Page 2

... Typ. Max. 240 Characteristic Values Min. Typ. Max 1.5 1000 = 100V 5,049,961 5,237,481 6,162,665 6,404,065 B1 5,063,307 5,381,025 6,259,123 B1 6,534,343 5,187,117 5,486,715 6,306,728 B1 6,583,505 IXTK22N100L IXTX22N100L TO-264 Outline Gate Drain 3 - Source Drain Millimeter Inches Dim. nC Min. Max. Min. A 4.82 5.13 .190 ...

Page 3

... V GS 12V 2.8 2.4 10V 2.0 9V 1.6 8V 1 -50 = 11A Value vs 125º 25º -50 IXTK22N100L IXTX22N100L V = 20V GS 14V 12V 10V Volts DS Fig Normalized 11A Value vs. DS(on) D Junction Temperature = 20V I = 22A D - 100 T - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -25 0 ...

Page 4

... 25º 0.8 0.9 1.0 1.1 0 Fig. 12. Maximum Transient Thermal Impedance 1.000 C iss 0.100 C oss 0.010 C rss 0.001 0.00001 IXTK22N100L IXTX22N100L Fig. 8. Transconductance 40ºC J 25ºC 125º Amperes D Fig. 10. Gate Charge = 500V 40 80 120 160 200 240 Q - NanoCoulombs G 0.0001 0.001 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 14. Forward-Bias Safe Operating Area 100 R DS(on) 25µs 100µs 10 1ms 10ms 150º 90ºC C Single Pulse 0.1 10 10,000 IXTK22N100L IXTX22N100L @ T = 90ºC C Limit 25µs 100µs 1ms 10ms DC 100 1,000 V - Volts DS IXYS REF: T_22N100L(8N)3-19-10 10,000 ...

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