IXFX360N15T2 IXYS, IXFX360N15T2 Datasheet - Page 2

• Manufacturer Part Number: IXFX360N15T2
• Description: MOSFET N-CH 150V 360A PLUS247
• Manufacturer: IXYS
• Series: GigaMOS™r
• Type: GigaMOS Trench T2 HiperFetr

Specifications of IXFX360N15T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 360A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 715nC @ 10V
• Input Capacitance (ciss) @ Vds: 47500pF @ 25V
• Power - Max: 1670W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Product: MOSFET Gate Drivers
• Rise Time: 170 ns
• Fall Time: 265 ns
• Supply Current: 100 A
• Maximum Power Dissipation: 1670 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Maximum Turn-off Delay Time: 115 ns
• Maximum Turn-on Delay Time: 50 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 360 A
• Output Voltage: 150 V
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 360
• Rds(on), Max, Tj=25°c, (?): 0.004
• Ciss, Typ, (pf): 47500
• Qg, Typ, (nc): 715
• Pd, (w): 1670
• Rthjc, Max, (k/w): 0.09
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 60A, V
= 160A, -di/dt = 100A/μs
= 60V, V
= 10V, I
= 0V, V
= 10V, V
= 1Ω (External)
= 10V, V
= 0V
ADVANCE TECHNICAL INFORMATION
GS
D
DS
GS
DS
DS
= 60A, Note 1
= 0V, Note 1
= 25V, f = 1MHz
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 100A
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
140
Min.
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
3060
47.5
0.15
230
665
170
115
265
715
185
200
Typ.
0.50
9.00
6,162,665
6,259,123 B1
6,306,728 B1
50
Typ.
Max.
0.09
1440
Max.
150
360
1.2
6,404,065 B1
6,534,343
6,583,505
°C/W
°C/W
μC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-264 (IXFK) Outline
PLUS 247
6,727,585
6,771,478 B2 7,071,537
Dim.
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
1
2
1
2
Terminals: 1 - Gate
20.80
15.75
19.81
25.91
19.81
20.32
TM
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
Min.
Millimeter
5.45 BSC
Millimeter
5.46 BSC
(IXFX) Outline
IXFK360N15T2
IXFX360N15T2
7,005,734 B2
7,063,975 B2
26.16
19.96
20.83
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
21.34
16.13
20.32
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
1.020
Min.
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
.215 BSC
Inches
Inches
7,157,338B2
Max.
1.030
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072