IXFX360N15T2 IXYS, IXFX360N15T2 Datasheet - Page 6

MOSFET N-CH 150V 360A PLUS247

IXFX360N15T2

Manufacturer Part Number
IXFX360N15T2
Description
MOSFET N-CH 150V 360A PLUS247
Manufacturer
IXYS
Series
GigaMOS™r
Type
GigaMOS Trench T2 HiperFetr
Datasheet

Specifications of IXFX360N15T2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
360A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
715nC @ 10V
Input Capacitance (ciss) @ Vds
47500pF @ 25V
Power - Max
1670W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Product
MOSFET Gate Drivers
Rise Time
170 ns
Fall Time
265 ns
Supply Current
100 A
Maximum Power Dissipation
1670 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Maximum Turn-off Delay Time
115 ns
Maximum Turn-on Delay Time
50 ns
Minimum Operating Temperature
- 55 C
Number Of Drivers
Single
Number Of Outputs
1
Output Current
360 A
Output Voltage
150 V
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
360
Rds(on), Max, Tj=25°c, (?)
0.004
Ciss, Typ, (pf)
47500
Qg, Typ, (nc)
715
Pd, (w)
1670
Rthjc, Max, (k/w)
0.09
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXFK360N15T2
IXFX360N15T2
Fig. 19. Maximum Transient Thermal Impedance
1.000
Fig. 19. Maximium Transient Thermal Impedance
.sadgsfgsf
0.200
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF:F_360N15T2(9V)8-19-09

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