IXFK30N110P IXYS, IXFK30N110P Datasheet

MOSFET N-CH 1100V 30A TO-264

IXFK30N110P

Manufacturer Part Number
IXFK30N110P
Description
MOSFET N-CH 1100V 30A TO-264
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFK30N110P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
360 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1100V (1.1kV)
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
235nC @ 10V
Input Capacitance (ciss) @ Vds
13600pF @ 25V
Power - Max
960W
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.36 Ohms
Drain-source Breakdown Voltage
1100 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
30 A
Power Dissipation
960 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1100
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.36
Ciss, Typ, (pf)
13600
Qg, Typ, (nc)
235
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
960
Rthjc, Max, (ºc/w)
0.13
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
Polar
HiPerFET
D25
DM
AR
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6 mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque
Mounting force
(IXFK)
(IXFX)
V
V
V
V
V
V
Power MOSFET
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
= 0V, I
= V
= ± 30V, V
= V
= 0V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
D
D
= 3mA
≤ V
= 1mA
= 0.5 • I
DS
DSS
= 0V
, T
(IXFK)
(IXFX)
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXFK30N110P
IXFX30N110P
20..120 /4.5..27
1100
Min.
Characteristic Values
3.5
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10
1100
1100
Typ.
± 30
± 40
960
150
300
260
1.5
30
75
15
15
10
6
± 200
360
6.5
Nm/lb.in.
Max.
2.5
50
V/ns
N/lb
mA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
t
TO-264 (IXFK)
PLUS247 (IXFX)
G = Gate
S = Source
Applications:
Features
Advantages
D25
rr
High Voltage Switched-mode and
resonant-mode power supplies
High Voltage Pulse Power Applications
High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
High Voltage DC-DC converters
High Voltage DC-AC inverters
Fast intrinsic diode
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
DS(on)
DSS
G
D
S
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
D = Drain
TAB = Drain
1100V
30A
360mΩ Ω Ω Ω Ω
300ns
(TAB)
(TAB)
DS99855B(04/08)

Related parts for IXFK30N110P

IXFK30N110P Summary of contents

Page 1

... ± 30V GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2008 IXYS CORPORATION, All rights reserved IXFK30N110P IXFX30N110P Maximum Ratings 1100 = 1MΩ 1100 GS ± 30 ± 1.5 ≤ 150° 960 -55 ... +150 150 -55 ... +150 300 260 1.13/10 20..120 /4.5.. Characteristic Values Min ...

Page 2

... DSS D D25 79 0.15 Characteristic Values (T = 25°C unless otherwise specified) J Min. Typ. JM 1.8 13 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFK30N110P IXFX30N110P TO-264 (IXFK) Outline Max Ω Millimeter Dim. Min 4.82 A1 2. 1.12 b1 2.39 ...

Page 3

... Fig. 2. Extended Output Characteristics @ 25º Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 3 10V GS 2.8 2 30A D 1.6 1.2 0.8 0.4 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXFK30N110P IXFX30N110P = 10V 15A Value 15A D 75 100 125 150 75 100 125 150 ...

Page 4

... C rss 0.001 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 550V 15A 10mA 100 150 200 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXFK30N110P IXFX30N110P 40ºC J 25ºC 125º 250 300 350 0 IXYS REF: F_30N110P(96) 04-01-08-A ...

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