SSM3J36FS(T5L,F,T) Toshiba, SSM3J36FS(T5L,F,T) Datasheet
SSM3J36FS(T5L,F,T)
Specifications of SSM3J36FS(T5L,F,T)
Related parts for SSM3J36FS(T5L,F,T)
SSM3J36FS(T5L,F,T) Summary of contents
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... TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ○ Power Management Switches • 1.5-V drive • = 3.60 Ω (max) (@V Low ON-resistance 2.70 Ω (max) (@ 1.60 Ω (max) (@ 1.31 Ω (max) (@ Absolute Maximum Ratings ( °C) Characteristics Drain-source voltage Gate-source voltage DC Drain current ...
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Electrical Characteristics Characteristics Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate−Source Charge Gate−Drain Charge Turn-on time Switching time Turn-off time ...
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I – -700 -2.8V Common Source -8V -4. °C -600 -500 -400 -300 -200 V GS =-1.2 V -100 0 0 -0.5 -1.0 Drain-source voltage – (ON ...
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1000 Common Source 25°C 300 100 30 10 -100 -1 -10 Drain current I (mA – 100 Common Source ...
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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...