TPCF8B01(TE85L,F,M Toshiba, TPCF8B01(TE85L,F,M Datasheet

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TPCF8B01(TE85L,F,M

Manufacturer Part Number
TPCF8B01(TE85L,F,M
Description
MOSFET P-CH SBD 20V 2.7A 2-3U1C
Manufacturer
Toshiba
Datasheet

Specifications of TPCF8B01(TE85L,F,M

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
110 mOhm @ 1.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
1.2V @ 200µA
Gate Charge (qg) @ Vgs
6nC @ 5V
Input Capacitance (ciss) @ Vds
470pF @ 10V
Power - Max
1.35W
Mounting Type
Surface Mount
Package / Case
*
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.11 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.7 A
Power Dissipation
1.35 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notebook PC Applications
Portable Equipment Applications
Absolute Maximum Ratings
MOSFET
SBD
Absolute Maximum Ratings for MOSFET and SBD
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement-model: V
Low forward voltage: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
Repetitive peak reverse voltage
Average forward current (Note 2a, 6)
Peak one cycle surge forward current
(non-repetitive)
Drain power
dissipation
(t = 5 s) (Note 2a) Single-device value at
Drain power
dissipation
(t = 5 s) (Note 2b) Single-device value at
Channel temperature
Storage temperature range
Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please refer to the next page.
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
(Ta = 25°C)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
(Ta = 25°C)
Characteristics
Characteristics
Characteristics
DC
Pulse
Single-device operation
dual operation (Note 3b)
Single-device operation
dual operation (Note 3b)
GS
= 20 kΩ)
DSS
FM(2)
th
(Note 2a, 3b, 5)
= -0.5 to-1.2 V (V
=-10 μA (max) (V
= 0.46 V (typ.)
(Note 3a)
(Note 3a)
(Note 1)
(Note 1)
(Note 4)
DS (ON)
fs
| = 4.7 S (typ.)
TPCF8B01
DS
= 72 mΩ (typ.)
Symbol
Symbol
Symbol
V
V
P
P
P
P
DS
V
V
I
I
E
F(AV)
E
T
I
I
FSM
T
RRM
DGR
GSS
D (1)
D (2)
D (1)
D (2)
DSS
I
DP
AR
AS
AR
stg
D
=-10 V, I
ch
= -20 V)
D
7(50Hz)
-55~150
1
Rating
Rating
Rating
-10.8
-1.35
0.11
1.35
1.12
0.53
0.33
= -200 μA)
-2.7
150
-20
-20
1.2
1.0
±8
20
(Ta = 25°C)
Unit
Unit
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
V
A
A
Weight: 0.011 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
1
8
7
2
TPCF8B01
2-3U1C
2009-09-29
6
3
Unit: mm
5
4

Related parts for TPCF8B01(TE85L,F,M

TPCF8B01(TE85L,F,M Summary of contents

Page 1

... TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current: I =-10 μA (max) (V DSS • Enhancement-model -0.5 to-1 • Low forward voltage ...

Page 2

... Without a dot: [[Pb]]/INCLUDES > MCV With a dot: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. ...

Page 3

Electrical Characteristics MOSFET Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total ...

Page 4

MOSFET I – −5 −2.5 −4 −4.5 −2.8 −4 −5 −3 −3.5 −3 −2 −1 0 −0.2 −0.4 −0.6 0 Drain-source voltage – −5 Common source −10 V ...

Page 5

R – (ON) 300 Common source −1.4 A Pulse test 250 −1.8 V 200 −2.7 A 150 100 −2 −0.7, −1.4, −2.7 A −4.5 ...

Page 6

Single pulse 100 Safe operating area 100 I D max (pulse ms* 10 ms* 1 ※ Single pulse Ta=25℃ Curves must be derated linearly with increase in temperature. V DSS max ...

Page 7

SBD i – Tj=150℃ 1 125℃ 75℃ 25℃ 0.1 0.01 0.8 0.0 0.2 0.4 0.6 Instantaneous forward voltage v F (V) Ta max – (AV) Device mounted on a glass-epoxy board(a) (Note 2a) 160 ...

Page 8

I – Pulse test 1 0.1 V 0.01 10V 5V 0.001 0.0001 100 Junction temperature T j (°C) (typ.) 0.06 Rectangular waveform 0° 0. 0.04 Conduction angle:α Tj=125℃ 0.03 ...

Page 9

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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