2SK2962(F) Toshiba, 2SK2962(F) Datasheet

2SK2962(F)

Manufacturer Part Number

2SK2962(F)

Description

MOSFET N-CH 100V 1A TO-92

Manufacturer

Toshiba

Datasheet

1.2SK2962F.pdf (6 pages)

Specifications of 2SK2962(F)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

700 mOhm @ 500mA, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

2V @ 1mA

Gate Charge (qg) @ Vgs

6.3nC @ 10V

Input Capacitance (ciss) @ Vds

140pF @ 10V

Power - Max

900mW

Mounting Type

Through Hole

Package / Case

TO-92-3 (Long Body), TO-226

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

4-V gate drive

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L

= 25 V, T

Pulse (Note 1)

= 20 kΩ)

: I

: V

DSS

= 25°C (initial), L = 221 mH, R

(Note 1)

(Note 2)

= 0.8 to 2.0 V (V

= 100 μA (max) (V

(Ta = 25°C)

Symbol

: R

: |Y

DGR

GSS

DSS

stg

Symbol

DS (ON)

2SK2962

th (ch−a)

| = 1.2 S (typ.)

= 10 V, I

= 0.5 Ω (typ.)

−55 to 150

= 100 V)

Rating

0.09

100

±20

137

150

0.9

Max

138

= 25 Ω, I

= 1 mA)

°C / W

Unit

°C

= 1 A

Weight: 0.36 (typ.)

JEDEC

JEITA

TOSHIBA

−π−MOSV)

TO-92MOD

2-5J1C

2009-09-29

—

2SK2962

Unit: mm

Related parts for 2SK2962(F)

2SK2962(F) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

... Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

3 2SK2962 2009-09-29 ...

Page 4

4 2SK2962 2009-09-29 ...

Page 5

Ω 221 2SK2962 1 ⎛ B ⎞ VDSS = ⋅ L ⋅ ⋅ ⎜ ⎟ − V ⎝ ⎠ VDSS DD ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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