HAT2198R Renesas Electronics America, HAT2198R Datasheet
HAT2198R
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HAT2198R Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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... HAT2198R Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 7.2 m typ. ( DS(on) GS Outline SOP Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current ...
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... HAT2198R Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge ...
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... HAT2198R Main Characteristics Power vs. Temperature Derating 4.0 Test Condition : When using the glass epoxy board (FR4 1.6 mm), PW < 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 300 240 180 120 Gate to Source Voltage Rev ...
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... HAT2198R Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 4 - Case Temperature Body–Drain Diode Reverse Recovery Time 100 50 20 di/dt = 100 A/µ 0.1 1 Reverse Drain Current Dynamic Input Characteristics Gate Charge Rev.2.00, Oct.18.2004, page 1000 20 A 100 100 125 150 0.1 Tc (° ...
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... HAT2198R Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 Source to Drain Voltage Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ Rev.2.00, Oct.18.2004, page 0,- Pulse Test 0 1.2 1.6 2 (V) SD θch - f(t) = γs (t) x θ θ 83.3°C/ 25°C When using the glass epoxy board (FR4 ...
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... HAT2198R Avalanche Test Circuit V DS Monitor Rg Vin 50Ω Switching Time Test Circuit Vin Monitor Rg Vin 10 V Rev.2.00, Oct.18.2004, page Monitor Vout Monitor D.U.T. Vin R L Vout td(on) Avalanche Waveform V DSS 1 • • DSS DD V (BR)DSS Switching Time Waveform 90% 10% 10% 10% 90% ...
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... Base material dimension Ordering Information Part Name HAT2198R-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00, Oct.18.2004, page ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...