2SK3462(TE16L1,NQ) Toshiba, 2SK3462(TE16L1,NQ) Datasheet

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2SK3462(TE16L1,NQ)

Manufacturer Part Number
2SK3462(TE16L1,NQ)
Description
MOSFET N-CH 250V 3A SC-64
Manufacturer
Toshiba
Datasheet

Specifications of 2SK3462(TE16L1,NQ)

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.7 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3.5V @ 1mA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
267pF @ 10V
Power - Max
20W
Mounting Type
Surface Mount
Package / Case
2-7J1B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK3462(TE16L1,NQ)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Switching Regulator, DC/DC Converter and
Motor Drive Applications
Absolute Maximum Ratings
Thermal Characteristics
4 V gate drive
Low drain-source ON-resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristic
DD
Characteristic
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
= 50 V, T
GS
DC
Pulse (t = 1 ms)
DSS
= 20 kΩ)
th
ch
= 1.5 to 3.5 V (V
= 25°C, L = 6.7 mH, I
(Note 1)
(Note 1)
(Note 2)
= 100 μA (V
DS (ON)
fs
(Ta = 25°C)
| = 2.2 S (typ.)
Symbol
DS
V
V
V
E
E
T
I
I
T
P
DGR
GSS
DSS
I
DP
AR
AS
AR
stg
D
ch
DS
R
R
D
Symbol
2SK3462
= 250 V)
th (ch-a)
th (ch-c)
= 1.2 Ω (typ.)
= 10 V, I
AR
= 3 A, R
−55 to 150
D
Rating
36.2
250
250
±20
150
= 1 mA)
20
3
6
3
2
1
Max
6.25
125
G
= 25 Ω
Unit
mJ
mJ
°C
°C
°C/W
°C/W
W
Unit
V
V
V
A
A
Weight: 0.36 g (typ.)
0.6 ± 0.15
JEDEC
JEITA
TOSHIBA
0.8 MAX.
2.3 ± 0. 15
1. GATE
2. DRAIN
3. SOURSE
(HEAT SIN K)
1
5.2 ± 0.2
6.5 ± 0.2
2
2.3 ± 0. 15
1.05 MAX.
3
2-7J1B
2010-02-05
2SK3462
1
Unit: mm
1.1 ± 0.2
2
0.6 MAX.
0.6 MAX.
3

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2SK3462(TE16L1,NQ) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

... A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

I – Common source 25°C 10 Pulse test Drain-source voltage V ( – Common ...

Page 4

R – (ON) 5 Common source Pulse test −80 − Case temperature Tc (°C) Capacitance – 1000 C ...

Page 5

Duty = 0.5 0.5 0.2 0.3 0.1 0.05 0.1 0.02 0.05 0.03 0.01 0.01 0.00001 0.0001 Safe operating area 100 max (pulsed 100 μ max (continuous) ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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