TPCA8024(TE12L,Q,M Toshiba, TPCA8024(TE12L,Q,M Datasheet

TPCA8024(TE12L,Q,M

Manufacturer Part Number

TPCA8024(TE12L,Q,M

Description

MOSFET N-CH 30V 35A 8SOIC ADV

Manufacturer

Toshiba

Datasheet

1.TPCA8024TE12LQM.pdf (7 pages)

Specifications of TPCA8024(TE12L,Q,M

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

35A

Mounting Type

Surface Mount

Package / Case

8-SOP

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Power - Max

Gate Charge (qg) @ Vgs

Vgs(th) (max) @ Id

Rds On (max) @ Id, Vgs

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Lithium-Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications

•

Absolute Maximum Ratings

Small footprint due to a small and thin package

Low drain-source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: For Note 1 to 4, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with care.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability

test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)

(Tc=25℃) (Note 4)

Pulse (Note 1)

= 20 kΩ)

DSS

(Tc=25℃)

(Note 2a)

(Note 2b)

= 1.3 to 2.5 V (V

(t = 10 s)

(Note 1)

(Note 3)

= 10 μA (max) (V

DS (ON)

(Ta = 25°C)

Symbol

TPCA8024

DGR

GSS

DSS

| = 72 S (typ.)

stg

= 3.5 mΩ (typ.)

= 10 V, I

= 30 V)

-55 to 150

Rating

±20

105

159

150

2.8

1.6

3.5

= 1 mA)

Unit

°C

Weight: 0.069 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

1,2,3: SOURCE

5,6,7,8: DRAIN

1.27

0.05

4.25 ± 0.2

5.0 ± 0.2

0.4 ± 0.1

2-5Q1A

TPCA8024

4: GATE

2010-01-05

―

0.05 M

0.15 ± 0.05

0.595

Unit: mm

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TPCA8024(TE12L,Q,M Summary of contents

Page 1

... TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: R • High forward transfer admittance: |Y • Low leakage current μA (max) (V DSS • ...

Page 2

Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient ( Thermal resistance, channel to ambient ( Marking (Note 5) TPCA Type 8024 ※ Note 1: Ensure that the channel temperature ...

Page 3

Electrical Characteristics Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge ...

Page 4

I – 3.8 3 Common source 4 25°C Pulse test 2 0.2 0.4 0.6 Drain − source voltage V ...

Page 5

R – (ON) 10 Common source Pulse test 8.5,17, 4 8.5,17, −80 − ...

Page 6

Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc=25℃ 100 10 1 0.1 0.001 0.01 P – (1) Device mounted on a glass-epoxy ...

Page 7

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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