TPCA8010-H(TE12LQM Toshiba, TPCA8010-H(TE12LQM Datasheet

TPCA8010-H(TE12LQM

Manufacturer Part Number

TPCA8010-H(TE12LQM

Description

MOSFET N-CH 200V 5.5A SOP-8 ADV

Manufacturer

Toshiba

Datasheet

1.TPCA8010-HTE12LQM.pdf (7 pages)

Specifications of TPCA8010-H(TE12LQM

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

450 mOhm @ 2.7A, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

5.5A

Vgs(th) (max) @ Id

4V @ 1mA

Gate Charge (qg) @ Vgs

10nC @ 10V

Input Capacitance (ciss) @ Vds

600pF @ 10V

Power - Max

45W

Mounting Type

Surface Mount

Package / Case

2-5Q1A

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.38 Ohms

Forward Transconductance Gfs (max / Min)

3.9 S

Drain-source Breakdown Voltage

200 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

5.5 A

Power Dissipation

45 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Gate Charge Qg

3.7 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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High-Speed Switching Applications

Switching Regulator Applications

DC-DC Converter Applications

•

Absolute Maximum Ratings

Small footprint due to a small and thin package

High-speed switching

Small gate charge: Q

Low drain-source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: For Notes 1 to 4, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with care.

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ)

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the

absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Characteristic

(Tc=25℃) (Note 4)

Pulsed (Note 1)

= 20 kΩ)

DSS

(Tc=25℃)

= 3.7 nC (typ.)

(Note 2a)

(Note 2b)

= 2.0 to 4.0 V (V

(t = 10 s)

(Note 1)

(Note 3)

= 100 μA (max) (V

TPCA8010-H

DS (ON)

(Ta = 25°C)

Symbol

DGR

GSS

DSS

| = 3.9S (typ.)

stg

= 0.38Ω (typ.)

= 10 V, I

= 200V)

−55 to 150

Rating

200

±20

150

5.5

2.8

1.6

5.5

1.5

= 1 mA)

Unit

°C

Weight: 0.069 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

1, 2, 3 : SOURCE

4 : GATE

5, 6, 7, 8 : DRAIN

1.27

4.25±0.2

0.05 S

5.0±0.2

TPCA8010-H

0.4±0.1

2-5Q1A

2009-12-21

―

0.8±0.1

0.05 M A

0.15±0.05

0.595

Unit: mm

Related parts for TPCA8010-H(TE12LQM

TPCA8010-H(TE12LQM Summary of contents

Page 1

... V V GSS 150 °C ch −55 to 150 T °C stg 1 TPCA8010-H Unit: mm 0.4±0.1 1.27 0. 0.15±0.05 4 0.595 1 A 5.0±0.2 0. 4.25±0 0.8±0 SOURCE 4 : GATE DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration 2009-12-21 ...

Page 2

... Symbol Max Unit R 2.78 °C/W th (ch-c) (Tc=25℃) R 44.6 °C/W th (ch-a) (Note 2a) R 78.1 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω 5 TPCA8010-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) 2009-12-21 ...

Page 3

... ≈ 160 5 (Ta = 25°C) Symbol Test Condition ⎯ I DRP = 5 DSF TPCA8010-H Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ 100 ⎯ 200 ⎯ 200 ⎯ 150 ⎯ 2.0 4.0 ⎯ 0.38 0.45 1.8 3.9 ⎯ 600 = MHz ⎯ 20 ⎯ ...

Page 4

... Common source Ta = 25°C Pulse test 4.8 4 4.5 4 Drain-source voltage Gate-source voltage V 10000 Common source Ta = 25° Pulse test 1000 100 10 100 0.1 Drain current I 4 TPCA8010-H I – 5.7 5.5 5.2 5 4 – Common source Ta = 25°C Pulse test 5.5 A 2 – ...

Page 5

... Total gate charge Q g 100 Common source Ta = 25°C Pulse test 0.1 120 160 0 Drain-source voltage iss 3 C oss rss 0 −80 100 ( (nC) 5 TPCA8010-H − −1.2 −0.8 −0.4 (V) DS − Common source 1mA Pulse test − 120 160 Ambient temperature Ta (°C) 2009-12-21 ...

Page 6

... I D max (Continuous) DC Operation Tc = 25° Single pulse Tc = 25°C Curves must be derated linearly with increase in temperature. V DSS max 0 100 Drain-source voltage – 0 Pulse width t ( 160 1000 (V) 6 TPCA8010-H (2) (1) (3) Single pulse 100 1000 P – 120 160 Case temperature Tc (°C) 2009-12-21 ...

Page 7

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCA8010-H 2009-12-21 ...

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