2SK2381(F,T)

Manufacturer Part Number2SK2381(F,T)
DescriptionMOSFET N-CH 200V 5A SC-67
ManufacturerToshiba
2SK2381(F,T) datasheet
 


Specifications of 2SK2381(F,T)

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs800 mOhm @ 2.5A, 10VDrain To Source Voltage (vdss)200V
Current - Continuous Drain (id) @ 25° C5AVgs(th) (max) @ Id3.5V @ 1mA
Gate Charge (qg) @ Vgs10nC @ 10VInput Capacitance (ciss) @ Vds440pF @ 10V
Power - Max25WMounting TypeThrough Hole
Package / Case2-10R1BConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.8 Ohms
Drain-source Breakdown Voltage200 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current5 APower Dissipation25 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
: I
DSS
Enhancement mode
: V
th
Absolute Maximum Ratings
Characteristics
Drain−source voltage
Drain−gate voltage (R
= 20 kΩ)
GS
Gate−source voltage
DC
(Note 1)
Drain current
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
= 50 V, T
= 25°C (initial), L = 4.2 mH, R
DD
ch
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
2SK2381
: R
= 0.56 Ω (typ.)
DS (ON)
: |Y
| = 4.5 S (typ.)
fs
= 100 μA (max) (V
= 200 V)
DS
= 1.5 to 3.5 V (V
= 10 V, I
= 1 mA)
DS
D
(Ta = 25°C)
Symbol
Rating
V
200
DSS
V
200
DGR
V
±20
GSS
I
5
D
I
20
DP
P
25
D
E
65
AS
I
5
AR
E
2.5
AR
T
150
ch
T
−55 to 150
stg
Symbol
Max
5.0
°C / W
R
th (ch−c)
R
62.5
°C / W
th (ch−a)
= 25 Ω, I
G
AR
1
2
−π−MOSV)
Unit
V
V
V
A
A
W
JEDEC
JEITA
SC-67
mJ
TOSHIBA
2-10R1B
A
Weight: 1.9 g (typ.)
mJ
°C
°C
Unit
= 5 A
2009-09-29
2SK2381
Unit: mm

2SK2381(F,T) Summary of contents

  • Page 1

    ... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

  • Page 2

    ... Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

  • Page 3

    3 2SK2381 2009-09-29 ...

  • Page 4

    4 2SK2381 2009-09-29 ...

  • Page 5

    Ω 4 2SK2381 1 ⎛ B ⎞ VDSS = ⋅ L ⋅ ⋅ ⎜ ⎟ − ⎝ VDSS DD ⎠ ...

  • Page 6

    ... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...