TPCA8102(TE12L,Q,M Toshiba, TPCA8102(TE12L,Q,M Datasheet

TPCA8102(TE12L,Q,M

Manufacturer Part Number

TPCA8102(TE12L,Q,M

Description

MOSFET P-CH 30V 40A SOP-8 ADV

Manufacturer

Toshiba

Datasheet

1.TPCA8102TE12LQM.pdf (7 pages)

Specifications of TPCA8102(TE12L,Q,M

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

6 mOhm @ 20A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

40A

Vgs(th) (max) @ Id

2V @ 1mA

Gate Charge (qg) @ Vgs

109nC @ 10V

Input Capacitance (ciss) @ Vds

4600pF @ 10V

Power - Max

45W

Mounting Type

Surface Mount

Package / Case

2-5Q1A

Configuration

Single Quad Drain Triple Source

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.006 Ohms

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

40 A

Power Dissipation

45 W

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Lithium Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications

•

Absolute Maximum Ratings

Small footprint due to small and thin package

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc=25℃)

Drain power dissipation

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: For Notes 1 to 4, refer to the next page.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)

(Tc=25℃) (Note 4)

Pulsed (Note 1)

= 20 kΩ)

DSS

(Note 2a)

(Note 2b)

(t = 10 s)

= −0.8 to −2.0 V (V

(Note 1)

(Note 3)

= −10 µA (max) (V

DS (ON)

(Ta = 25°C)

Symbol

TPCA8102

DGR

GSS

DSS

stg

| = 60S (typ.)

= 4.5mΩ (typ.)

= −10 V, I

= −30 V)

−55 to 150

Rating

−120

− 40

−30

±20

208

150

2.8

1.6

4.5

= −1 mA)

Unit

°C

Weight: 0.076 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

1,2,3:SOURCE

4:GATE

5,6,7,8:DRAIN

1.27

4.25±0.2

0.05 S

5.0±0.2

0.4±0.1

2-5Q1A

TPCA8102

2006-11-16

⎯

0.8±0.1

0.05 M A

0.15±0.05

0.595

Unit: mm

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TPCA8102(TE12L,Q,M Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

Thermal Characteristics Characteristics Thermal resistance, channel to case (Tc=25 ℃ ) Thermal resistance, channel to ambient ( (Note 2a) Thermal resistance, channel to ambient ( (Note 2b) Marking (Note 5) TPCA Type 8102 Lot ...

Page 3

Electrical Characteristics Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF ...

Page 4

I – −50 −10 −4 −3.8 Common source Ta = 25°C Pulse test −8 −40 −3.6 −3 −6 −4.5 −30 − −2.4V −10 0 −0.2 −0.4 −0.6 −0.8 0 Drain-source voltage V (V) DS ...

Page 5

R – (ON) 20 Common source −4 V Pulse test − − − −10/ −20 / −40A 4 0 −80 −40 ...

Page 6

Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) 100 (3) Tc=25℃ 0.1 0.001 0.01 P – (1)Device mounted on a glass-epoxy board(a) ...

Page 7

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...

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