TPCA8A01-H(TE12L,Q Toshiba, TPCA8A01-H(TE12L,Q Datasheet

TPCA8A01-H(TE12L,Q

Manufacturer Part Number

TPCA8A01-H(TE12L,Q

Description

MOSFET N-CH 30V 36A SOP8 ADV

Manufacturer

Toshiba

Datasheet

1.TPCA8A01-HTE12LQ.pdf (8 pages)

Specifications of TPCA8A01-H(TE12L,Q

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

5.6 mOhm @ 18A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

36A

Gate Charge (qg) @ Vgs

35nC @ 10V

Input Capacitance (ciss) @ Vds

1970pF @ 10V

Power - Max

45W

Mounting Type

Surface Mount

Package / Case

2-5Q1A

Configuration

Single Quad Drain Triple Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0056 Ohms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

36 A

Power Dissipation

2.8 W

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Vgs(th) (max) @ Id

Lead Free Status / Rohs Status

Details

Current page: 1 of 8
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High Efficiency DC-DC Converter Applications

Notebook PC Applications

Portable Equipment Applications

•

Absolute Maximum Ratings

Built-in schottky barrier diode

Low forward voltage: V

Small footprint due to a small and thin package

High speed switching

Small gate charge: Q

Low drain-source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: For Notes 1 to 4, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with care. Schottky barrier diodes have

large-reverse-current-leakage characteristic compared to other rectifier products. This current leakage combined with

improper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into

consideration during design.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Characteristic

TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode

(Tc=25℃) (Note 4)

Pulsed (Note 1)

Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS Ⅲ)

DSS

= 20 kΩ)

DSF

=11 nC (typ.)

(Tc=25℃)

= 1.1 to 2.3 V (V

(Note 2a)

(Note 2b)

(t = 10 s)

(Note 1)

= 100 μA (max) (V

(Note 3)

= −0.6 V (max)

TPCA8A01-H

DS (ON)

(Ta = 25°C)

| = 70 S (typ.)

Symbol

DGR

GSS

DSS

stg

=4.3 mΩ (typ.)

= 10 V, I

= 30 V)

−55 to 150

Rating

±20

108

168

150

2.8

1.6

2.1

= 1 mA)

Unit

°C

Weight: 0.080 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

0.95±0.05

1,2,3：SOURCE

5,6,7,8：DRAIN

0.5±0.1 1.27

4.25±0.2

0.05 S

5.0±0.2

TPCA8A01-H

0.4±0.1

2-5Q1A

2010-01-19

―

4：GATE

0.8±0.1

1.1±0.2

0.05 M A

0.15±0.05

0.595

0.166±0.05

Unit: mm

Related parts for TPCA8A01-H(TE12L,Q

TPCA8A01-H(TE12L,Q Summary of contents

Page 1

... 2 1 168 2 150 °C ch −55 to 150 T °C stg 1 TPCA8A01-H Unit: mm 0.4±0.1 0.5±0.1 1.27 0. 0.15±0.05 4 0.595 1 5.0±0.2 A 0.95±0.05 0.166±0.05 0. 1.1±0 4.25±0 0.8±0.1 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0 ...

Page 2

... Symbol Max Unit R 2.78 °C/W th (ch-c) (Tc=25℃) R 44.6 °C/W th (ch-a) (Note 2a) R 78.1 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω， TPCA8A01-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) ( 2010-01-19 ...

Page 3

... Q g ≈ gs1 ≈ (Ta = 25°C) Symbol Test Condition ⎯ I DRP = 1 DSF = TPCA8A01-H Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ 100 ⎯ 30 ⎯ 15 ⎯ 1.1 2.3 ⎯ 6.2 8.5 ⎯ 4.3 5 ⎯ 1970 = MHz ⎯ 240 ⎯ 950 ⎯ ...

Page 4

... Drain-source voltage V 0.4 0.32 0.24 0.16 0. (V) Gate-source voltage V 100 Common source Ta = 25°C Pulse test 10 1 100 0.1 4 TPCA8A01-H I – Common source 3 25°C 3.6 4.5 Pulse test 5 6 3.4 3 – Common source Ta = 25°C Pulse test ...

Page 5

... Drain-source voltage iss C oss 2 C rss 1 0 −80 −40 100 Ambient temperature Ta (°C) ( TPCA8A01-H − 4 Common source Ta = 25°C Pulse test −0.2 −0.4 −0.6 −0.8 −1.0 (V) DS − Common source Pulse test 120 160 2010-01-19 ...

Page 6

... I D max (Pulse 100 t = max (Continuous) DC Operation 25°C * Single - pulse 25°C Curves must be derated linearly with increase in temperature. V DSS max 0.1 0 Drain-source voltage – 0 Pulse width t ( 160 0 100 (V) 6 TPCA8A01-H (2) (1) (3) Single - pulse 100 1000 P – 120 160 Case temperature Tc (°C) 2010-01-19 ...

Page 7

... Pulse test 125 25°C 1 0.1 −0.2 −0.4 −0.6 −0.8 0 Drain-source voltage V (V) DSF Tch – 160 Pulse test 120 Drain-source voltage V (V) DS 100000 Pulse test 10000 1000 100 10 − Channel temperature Tch (° TPCA8A01-H I – Tch (typ.) DSS = 120 160 2010-01-19 ...

Page 8

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 8 TPCA8A01-H 2010-01-19 ...

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