TPCA8006-H(TE12L,Q Toshiba, TPCA8006-H(TE12L,Q Datasheet

MOSFET N-CH 100V 18A 8-SOPA

TPCA8006-H(TE12L,Q

Manufacturer Part Number
TPCA8006-H(TE12L,Q
Description
MOSFET N-CH 100V 18A 8-SOPA
Manufacturer
Toshiba
Datasheet

Specifications of TPCA8006-H(TE12L,Q

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
67 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
780pF @ 10V
Power - Max
45W
Mounting Type
Surface Mount
Package / Case
8-SOPA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TPCA8006HTE12LQTR
Switching Regulator Applications
Motor Drive Applications
DC/DC Converter Applications
Absolute Maximum Ratings
Small footprint due to a small and thin package
High speed switching
Low drain-source ON-resistance
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
Drain power dissipation
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note: For Notes 1 to 4, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristic
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVII)
(Note 2a) (Note 4)
GS
DC
Pulsed (Note 1)
:
R
= 20 kΩ)
DSS
th
DS (ON)
(Tc=25℃)
(Note 2a)
(Note 2b)
(t = 10 s)
(t = 10 s)
= 3.0 to 5.0 V (V
(Note 1)
(Note 3)
= 100 µA (max) (V
= 41 mΩ (typ.) (V
TPCA8006-H
(Ta = 25°C)
Symbol
V
V
V
fs
E
E
T
I
I
T
P
P
P
DGR
GSS
DSS
I
DP
AR
AR
stg
| = 15 S (typ.)
AS
D
ch
D
D
D
DS
= 10 V, I
DS
G
= 100 V)
−55 to 150
=10V, I
Rating
100
100
±20
224
150
2.8
1.6
4.5
D
18
36
45
18
1
= 1 mA)
D
=9A)
Unit
mJ
mJ
°C
°C
W
W
W
V
V
V
A
A
Weight: 0.069 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
1,2,3:SOURCE
5,6,7,8:DRAIN
S
8
1
8
1
8
1
1.27
4.25±0.2
7
2
0.05 S
5.0±0.2
TPCA8006-H
0.4±0.1
2-5Q1A
6
3
2006-11-20
4
5
4
5
0.8±0.1
4:GATE
0.05 M A
0.15±0.05
0.595
5
4
Unit: mm
A

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TPCA8006-H(TE12L,Q Summary of contents

Page 1

... GSS 2 1 224 4 150 °C ch −55 to 150 T °C stg 1 TPCA8006-H Unit: mm 0.4±0.1 1.27 0. 0.15±0.05 4 0.595 1 A 5.0±0.2 0. 4.25±0 0.8±0.1 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration 2006-11-20 ...

Page 2

... Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 2.78 °C/W th (ch-c) R 44.6 °C/W th (ch-a) R 78.1 °C/W th (ch-a) (b) Device mounted on a glass-epoxy board (b) FR-4 (Unit: mm) ( Ω, TPCA8006-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm 2006-11-20 ...

Page 3

... Duty < µ ∼ − gs1 (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCA8006-H Min Typ. Max Unit ⎯ ⎯ ±100 nA ⎯ ⎯ µA 100 ⎯ ⎯ 100 V ⎯ 3.0 5.0 V ⎯ mΩ ⎯ 7 ⎯ ⎯ 780 ⎯ ⎯ ...

Page 4

... Drain-source voltage 1.6 1.2 0.8 0 Gate-source voltage (ON) 1 Common source Ta = 25°C Pulse test 0 100 0.01 0.1 1 Drain current I 4 TPCA8006-H I – Common source 25°C 8.5 Pulse test 8 7 (V) DS – Common source Ta = 25°C Pulse test 4 (V) GS − I ...

Page 5

... Pulse test Total gate charge Q (nC) g 100 Common source Ta = 25°C Pulse test 10 1 0.1 160 −0.2 0 Drain-source voltage Common source C rss Pulse test 0 −80 −40 100 Ambient temperature Ta (° TPCA8006-H I – −0.4 −0.6 −0.8 −1.0 −1.2 ( – 120 160 2006-11-20 ...

Page 6

... I D max (Continuous) 10ms * DC Operation Tc = 25° Single - pulse 0 25°C Curves must be derated linearly with increase in temperature. V DSS max 0.01 0 100 Drain-source voltage V ( – (2) (1) (3) Single - pulse 0 100 Pulse width t ( 160 0 40 Case temperature Tc (°C) 1000 6 TPCA8006-H 1000 P – 120 160 2006-11-20 ...

Page 7

... TPCA8006-H 2006-11-20 ...

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