HAT2165N

Manufacturer Part NumberHAT2165N
DescriptionMOSFET N-CH 30V 55A LFPAKI
ManufacturerRenesas Electronics America
HAT2165N datasheet
 


Specifications of HAT2165N

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs3.6 mOhm @ 27.5A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C55AGate Charge (qg) @ Vgs33nC @ 4.5V
Input Capacitance (ciss) @ Vds5180pF @ 10VPower - Max30W
Mounting TypeSurface MountPackage / CaseLFPAK-i
Lead Free Status / RoHS StatusContains lead / RoHS non-compliantVgs(th) (max) @ Id-
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Renesas Technology Releases LFPAK -i Top-Surface-Radiation Type Package for
Power MOSFETs as New Package Offering 40% Reduction in Mounted Thermal
Resistance
Offering higher thermal radiation characteristics and larger current enabling reduction
in size of server DC-DC power supplies, plus compatibility with SOP -8
Tokyo, June 28, 2004
Renesas Technology Corp. today announced the development of the LFPAK-i
(Loss-Free Package – inverted) top-surface-radiation type package as a new power MOSFET package
offering greatly improved thermal radiation characteristics through use of a top-mounted heat sink, together
with increased current capability, by means of a structure that emits heat from the upper surface. In the
initial phase products using the LFPAK -i, three power MOSFETs — the HAT2165N, HAT2166N, and
HAT2168N — for server DC-DC power supply voltage regulator (VR) are being released, with sample
shipments scheduled to begin in July 2004 in Japan.
Features of the new package are summarized below.
(1) Approximately 30% increase in current capacity through 40% reduction in mounted thermal radiation
resistance value compared with previous Renesas Technology packages
The LFPAK-i uses a structure in which the heat-radiating die header is exposed on the upper surface of
the package, and when a heat sink is mounted on top (when using forced-air cooling), the mounted
thermal resistance value in the thermal saturation state is reduced by 40%, from 25ºC/W to 15ºC/W,
compared with Renesas Technology’s current LFPAK package using a structure whereby heat is
dissipated into the printed wiring board. This enables an approximately 30% increase in current to be
achieved compared with the LFPAK, allowing server VRs to be made smaller.
(2) SOP-8 compatibility
The LFPAK-i has the same electrode arrangement and footprint as the industry-standard SOP-8
package, enabling the same kind of system design and mounting to be used as for the SOP-8.
< Product Background >
A VR that supplies power to a server’s CPU and memory converts a 12 V input voltage to the lower
voltage, typically 1.3 V, required by the CPU and memory. With the increased high current associated with
faster CPUs and memory and the lower voltages associated with miniaturization, the relevant voltage and
current are predicted to change from approximately 1.3 V and 70 A at present to 0.8 V and 150 A in the
future. In order to handle such a low voltage and high current, high-current capability is also desired of the
power MOSFETs installed in a VR to perform current control.
-more-

HAT2165N Summary of contents

  • Page 1

    ... In the initial phase products using the LFPAK -i, three power MOSFETs — the HAT2165N, HAT2166N, and HAT2168N — for server DC-DC power supply voltage regulator (VR) are being released, with sample shipments scheduled to begin in July 2004 in Japan ...

  • Page 2

    ... MOSFETs that need to be installed in a VR, enabling VRs to be made smaller. < Details of the New Products > The HAT2165N, HAT2166N, and HAT2168N being released in this phase are 30 V withstand-voltage N- channel power MOSFETs for highly efficient server VR use that offer low thermal resistance and on- resistance ...

  • Page 3

    ... made smaller. Renesas Technology’s well-established 0.35 µm process 8th-generation trench structure is used for the elements, enabling low on-resistance figures (at VGS = 2.8 m typ. for the HAT2165N, 3.2 m typ. for the HAT2166N, and 6.3 m typ. for the HAT2168N to be achieved. ...

  • Page 4

    ... Specifications > 25ºC Maximum Ratings Product Name VDSS (V) HAT2165N 30 HAT2166N 30 HAT2168N 30 Information contained in this news release is current as of the date of the press announcement, but may be subject to change without prior notice. On-Resistance RDS(on VGS = 4.5 V VGS = (A) typ. max. typ. 55 3.7 5.6 2 ...