HAT2165N Renesas Electronics America, HAT2165N Datasheet

HAT2165N

Manufacturer Part Number

HAT2165N

Description

MOSFET N-CH 30V 55A LFPAKI

Manufacturer

Renesas Electronics America

Datasheet

1.HAT2168N-EL-E.pdf (4 pages)

Specifications of HAT2165N

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

3.6 mOhm @ 27.5A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

55A

Gate Charge (qg) @ Vgs

33nC @ 4.5V

Input Capacitance (ciss) @ Vds

5180pF @ 10V

Power - Max

30W

Mounting Type

Surface Mount

Package / Case

LFPAK-i

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Vgs(th) (max) @ Id

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Renesas Technology Releases LFPAK -i Top-Surface-Radiation Type Package for

Power MOSFETs as New Package Offering 40% Reduction in Mounted Thermal

Resistance

in size of server DC-DC power supplies, plus compatibility with SOP -8

Tokyo, June 28, 2004

(Loss-Free Package – inverted) top-surface-radiation type package as a new power MOSFET package

offering greatly improved thermal radiation characteristics through use of a top-mounted heat sink, together

with increased current capability, by means of a structure that emits heat from the upper surface. In the

initial phase products using the LFPAK -i, three power MOSFETs — the HAT2165N, HAT2166N, and

HAT2168N — for server DC-DC power supply voltage regulator (VR) are being released, with sample

shipments scheduled to begin in July 2004 in Japan.

Features of the new package are summarized below.

(1) Approximately 30% increase in current capacity through 40% reduction in mounted thermal radiation

(2) SOP-8 compatibility

< Product Background >

A VR that supplies power to a server’s CPU and memory converts a 12 V input voltage to the lower

voltage, typically 1.3 V, required by the CPU and memory. With the increased high current associated with

faster CPUs and memory and the lower voltages associated with miniaturization, the relevant voltage and

current are predicted to change from approximately 1.3 V and 70 A at present to 0.8 V and 150 A in the

future. In order to handle such a low voltage and high current, high-current capability is also desired of the

power MOSFETs installed in a VR to perform current control.

Offering higher thermal radiation characteristics and larger current enabling reduction

resistance value compared with previous Renesas Technology packages

The LFPAK-i uses a structure in which the heat-radiating die header is exposed on the upper surface of

the package, and when a heat sink is mounted on top (when using forced-air cooling), the mounted

thermal resistance value in the thermal saturation state is reduced by 40%, from 25ºC/W to 15ºC/W,

compared with Renesas Technology’s current LFPAK package using a structure whereby heat is

dissipated into the printed wiring board. This enables an approximately 30% increase in current to be

achieved compared with the LFPAK, allowing server VRs to be made smaller.

The LFPAK-i has the same electrode arrangement and footprint as the industry-standard SOP-8

package, enabling the same kind of system design and mounting to be used as for the SOP-8.

Renesas Technology Corp. today announced the development of the LFPAK-i

-more-

Related parts for HAT2165N

HAT2165N Summary of contents

Page 1

... In the initial phase products using the LFPAK -i, three power MOSFETs — the HAT2165N, HAT2166N, and HAT2168N — for server DC-DC power supply voltage regulator (VR) are being released, with sample shipments scheduled to begin in July 2004 in Japan ...

Page 2

... MOSFETs that need to be installed in a VR, enabling VRs to be made smaller. < Details of the New Products > The HAT2165N, HAT2166N, and HAT2168N being released in this phase are 30 V withstand-voltage N- channel power MOSFETs for highly efficient server VR use that offer low thermal resistance and on- resistance ...

Page 3

... made smaller. Renesas Technology’s well-established 0.35 µm process 8th-generation trench structure is used for the elements, enabling low on-resistance figures (at VGS = 2.8 m typ. for the HAT2165N, 3.2 m typ. for the HAT2166N, and 6.3 m typ. for the HAT2168N to be achieved. ...

Page 4

... Specifications > 25ºC Maximum Ratings Product Name VDSS (V) HAT2165N 30 HAT2166N 30 HAT2168N 30 Information contained in this news release is current as of the date of the press announcement, but may be subject to change without prior notice. On-Resistance RDS(on VGS = 4.5 V VGS = (A) typ. max. typ. 55 3.7 5.6 2 ...

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