HAT2165N Renesas Electronics America, HAT2165N Datasheet - Page 4

• Manufacturer Part Number: HAT2165N
• Description: MOSFET N-CH 30V 55A LFPAKI
• Manufacturer: Renesas Electronics America

Specifications of HAT2165N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 55A
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5180pF @ 10V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: LFPAK-i
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Vgs(th) (max) @ Id: -

< Specifications >
Ta = 25ºC
Product Name
HAT2165N
HAT2166N
HAT2168N
Information contained in this news release is current as of the date of the press announcement, but may be
subject to change without prior notice.
Maximum Ratings
VDSS (V)
30
30
30
On-Resistance RDS(on) (m )
ID (A)
55
45
30
-###-
VGS = 4.5 V
typ.
3.7
4.3
9.1
max.
13.8
5.6
6.4
VGS = 10 V
typ.
2.8
3.2
6.3
max.
3.6
4.1
8.2
Package
LFPAK-i
(SOP-8
compatible)