HAT2165N-EL-E Renesas Electronics America, HAT2165N-EL-E Datasheet - Page 2

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HAT2165N-EL-E

Manufacturer Part Number
HAT2165N-EL-E
Description
MOSFET N-CH 30V 55A LFPAKI
Manufacturer
Renesas Electronics America
Datasheet

Specifications of HAT2165N-EL-E

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.6 mOhm @ 27.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
55A
Gate Charge (qg) @ Vgs
33nC @ 4.5V
Input Capacitance (ciss) @ Vds
5180pF @ 10V
Power - Max
30W
Mounting Type
Surface Mount
Package / Case
LFPAK-i
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
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The structure of a typical surface-mount power device provides for generated heat to be dissipated into the
printed wiring board. However, in applications such as servers that incorporate a large number of VRs, the
rise in board temperature caused by a higher current is a problem, and since the approach of radiating heat
above a board is reaching its limits, manufacturers are beginning to mount heat sinks on the top of products
and implement thermal radiation by means of forced-air cooling.
To meet this market need and help solve the associated problems, Renesas Technology has developed the
new LFPAK-i package optimized for top-surface radiation through the use of a structure in which the heat-
radiating die header is exposed on the top of the package.
< Details of the New Package >
The newly developed LFPAK-i employs a structure that retains the advantages of Renesas Technology’s
1
current LFPAK package using a bonding-wire-less structure achieving low resistance and low inductance*
for highly efficient power supplies, while mounting a heat-radiating die header on the upper surface to
enable heat to be dissipated efficiently from a top-mounted heat sink. The LFPAK-i can be mounted using
the same electrode arrangement and footprint as the industry-standard SOP-8 package.
In a comparison of package-top heat sink mounting (when using forced-air cooling) with a conventional
LFPAK, the mounted thermal radiation resistance value in the thermal saturation state was actually reduced
by 40%, from 25ºC/W to 15ºC/W. This makes it possible to reduce the rise in PWB temperature that has
previously threatened to be a problem.
It is also possible to reduce the rise in power MOSFET channel temperature (Δ Tch) with the same applied
2
power, thereby also reducing on-resistance*
, which is proportional to channel temperature. For example,
when a heat sink is mounted on the top of an LFPAK-i and power equivalent to 2 W power consumption is
applied, the rise in power MOSFET channel temperature (ΔTch) can be reduced by 20ºC from the 50ºC of
an LFPAK to 30ºC. This is equivalent to an approximately 7% decrease in on-resistance (calculated on the
basis of a reduction in power MOSFET temperature from 120ºC to 100ºC through the ability to lower the
channel temperature by 20ºC).
Moreover, when thermal radiation design is carried out on the assumption that an identical rise in channel
temperature occurs under identical conditions, an approximately 30% current increase can be achieved with
the LFPAK-i. A 30% improvement in current density making it possible to decrease the number of power
MOSFETs that need to be installed in a VR, enabling VRs to be made smaller.
< Details of the New Products >
The HAT2165N, HAT2166N, and HAT2168N being released in this phase are 30 V withstand-voltage N-
channel power MOSFETs for highly efficient server VR use that offer low thermal resistance and on-
resistance.
By mounting a heat sink on the top of these devices, the mounted thermal radiation resistance value in the
thermal saturation state (when using forced-air cooling) is reduced by 40%, from 25ºC/W to 15ºC/W, and
current increased by approximately 30%, compared with Renesas Technology’s current HAT2165H,
HAT2166H, and HAT2168H using LFPAK packages.
-more-

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