HAT2165H-EL-E Renesas Electronics America, HAT2165H-EL-E Datasheet - Page 5

• Manufacturer Part Number: HAT2165H-EL-E
• Description: MOSFET N-CH 30V 55A LFPAK
• Manufacturer: Renesas Electronics America

Specifications of HAT2165H-EL-E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5180pF @ 10V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: LFPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HAT2165H
Main Characteristics
Rev.6.00 Sep 20, 2005 page 3 of 7
100
250
200
150
100
40
30
20
10
80
60
40
20
50
0
0
0
Drain to Source Saturation Voltage vs.
Drain to Source Voltage
Gate to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
4.5 V
2
Gate to Source Voltage
4
10 V
50
Pulse Test
4
8
100
12
6
Pulse Test
Tc (°C)
150
I
D
V
16
V
8
= 50 A
GS
DS
3.0 V
2.8 V
2.6 V
2.4 V
10 A
20 A
(V)
(V)
200
20
10
0.01
500
100
100
0.1
Static Drain to Source on State Resistance
10
80
60
40
20
10
1
5
2
1
0
0.1
1
Drain to Source Voltage
Gate to Source Voltage
Operation in
this area is
limited by R
Pulse Test
Tc = 25°C
1 shot Pulse
V
Pulse Test
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
0.3
Tc = 75°C
= 10 V
3
1
Drain Current
vs. Drain Current
10
1
DS(on)
V
GS
2
= 4.5 V
30
3
10 V
-25°C
3
25°C
100
10
I
D
(A)
V
V
300
4
30
GS
DS
(V)
(V)
1000
100
5