HAT2165H-EL-E Renesas Electronics America, HAT2165H-EL-E Datasheet - Page 6

• Manufacturer Part Number: HAT2165H-EL-E
• Description: MOSFET N-CH 30V 55A LFPAK
• Manufacturer: Renesas Electronics America

Specifications of HAT2165H-EL-E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5180pF @ 10V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: LFPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HAT2165H
Rev.6.00 Sep 20, 2005 page 4 of 7
100
Static Drain to Source on State Resistance
50
20
10
-25
40
30
20
10
8
6
4
2
0
0.1
0
10 V
5 V
Pulse Test
I
V
V
Reverse Drain Current
D
DD
Case Temperature
GS
Dynamic Input Characteristics
= 55 A
0.3
0
Body-Drain Diode Reverse
= 25 V
10 V
Gate Charge
= 4.5 V
20
V
DS
25
vs. Temperature
Recovery Time
1
40
50
di / dt = 100 A / µs
V
V
3
GS
DD
50 A
75
10 A, 20 A, 50 A
= 0, Ta = 25°C
= 5 V
60
I
10 V
25 V
D
Qg (nc)
= 10 A, 20 A
10
100 125 150
Tc
I
80
DR
30
(°C)
V
GS
(A)
100
100
16
12
8
4
0
10000
1000
3000
1000
1000
300
100
300
100
300
100
0.3
0.1
30
10
30
10
30
10
0.1 0.2
3
1
3
0.1
0
Drain to Source Voltage V
t d(on)
t r
Forward Transfer Admittance vs.
Tc = -25°C
0.3
5
Switching Characteristics
Drain to Source Voltage
Typical Capacitance vs.
0.5
Drain Current
Drain Current I
t f
V
Rg = 4.7 Ω, duty ≤ 1 %
10
1
Drain Current
1
GS
25°C
= 10 V, V
t d(off)
15
3
2
5
20
10
10
I
75°C
V
Pulse Test
DS
D
D
DS
V
f = 1 MHz
= 10 V
(A)
20
GS
(A)
= 10 V
30
DS
25
= 0
Coss
Ciss
Crss
50
(V)
100
100
30